SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

BOSI, Gianni
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 3.949
AS - Asia 1.793
EU - Europa 1.143
SA - Sud America 411
AF - Africa 39
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
Totale 7.340
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 3.855
SG - Singapore 797
CN - Cina 444
IT - Italia 407
BR - Brasile 354
HK - Hong Kong 236
PL - Polonia 184
UA - Ucraina 128
TR - Turchia 106
DE - Germania 105
VN - Vietnam 86
GB - Regno Unito 81
RU - Federazione Russa 67
SE - Svezia 63
CA - Canada 43
MX - Messico 40
FI - Finlandia 32
IN - India 24
AR - Argentina 23
ID - Indonesia 20
ZA - Sudafrica 19
JP - Giappone 15
AT - Austria 13
LT - Lituania 13
NL - Olanda 13
BD - Bangladesh 11
EC - Ecuador 9
CO - Colombia 8
ES - Italia 8
FR - Francia 8
IQ - Iraq 7
UZ - Uzbekistan 7
JO - Giordania 6
TW - Taiwan 6
EG - Egitto 5
MA - Marocco 5
OM - Oman 5
PE - Perù 5
AZ - Azerbaigian 4
BG - Bulgaria 4
CH - Svizzera 4
CL - Cile 4
VE - Venezuela 4
AE - Emirati Arabi Uniti 3
BE - Belgio 3
CZ - Repubblica Ceca 3
DZ - Algeria 3
KE - Kenya 3
KR - Corea 3
PK - Pakistan 3
SA - Arabia Saudita 3
UY - Uruguay 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
HN - Honduras 2
PA - Panama 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
AU - Australia 1
BA - Bosnia-Erzegovina 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DM - Dominica 1
EU - Europa 1
GE - Georgia 1
GT - Guatemala 1
IE - Irlanda 1
IL - Israele 1
JM - Giamaica 1
LV - Lettonia 1
MK - Macedonia 1
MY - Malesia 1
NI - Nicaragua 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
PY - Paraguay 1
QA - Qatar 1
RS - Serbia 1
SN - Senegal 1
Totale 7.340
Salva come PNG Salva come JPEG
Città #
Fairfield 510
Singapore 432
Ashburn 409
Woodbridge 372
Houston 277
Hong Kong 233
Ferrara 222
Seattle 191
Warsaw 184
Wilmington 173
Cambridge 170
Beijing 159
Santa Clara 159
Chandler 157
Jacksonville 150
Ann Arbor 140
Dallas 136
Los Angeles 69
Nanjing 53
Izmir 48
Princeton 47
Bologna 33
Dearborn 33
Mexico City 33
Shanghai 32
The Dalles 31
Boardman 29
São Paulo 27
San Diego 26
Hefei 25
Ho Chi Minh City 25
Milan 25
Chicago 24
Hanoi 22
Toronto 22
Nanchang 20
Addison 16
Moscow 16
San Francisco 16
London 15
New York 15
Rio de Janeiro 15
Shenyang 15
Washington 15
Brooklyn 14
Chennai 14
Jakarta 14
Kunming 12
Tokyo 12
Amsterdam 11
Rome 10
Stockholm 10
Denver 9
Johannesburg 9
Mountain View 9
Orem 9
Tianjin 9
Assago 8
Curitiba 8
Des Moines 8
Ferrara di Monte Baldo 8
Norwalk 8
Auburn Hills 7
Belo Horizonte 7
Boston 7
Bremen 7
Charlotte 7
Columbus 7
Frankfurt am Main 7
Hebei 7
Jiaxing 7
Salt Lake City 7
Vienna 7
Amman 6
Atlanta 6
Council Bluffs 6
Falkenstein 6
Jinan 6
Maceió 6
Orange 6
Taipei 6
Uberlândia 6
Calgary 5
Changsha 5
Haiphong 5
Montreal 5
Munich 5
Ottawa 5
Zhengzhou 5
Ankara 4
Brasília 4
Buenos Aires 4
Cagliari 4
Falls Church 4
Guarulhos 4
Guayaquil 4
Lima 4
Manchester 4
Miami 4
Nova Friburgo 4
Totale 5.213
Salva come PNG Salva come JPEG
Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 229
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 225
Extremely low-frequency measurements using an active bias tee 184
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 179
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 174
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 174
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 170
Behavioral Modeling of GaN FETs: a Load-Line Approach 170
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 167
A GaN power amplifier for 100 VDC bus in GPS L-band 167
Linear versus nonlinear de-embedding: Experimental investigation 166
Evaluation of FET performance and restrictions by low-frequency measurements 164
75-VDC GaN technology investigation from a degradation perspective 163
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 160
Waveform engineering: State-of-the-art and future trends (invited paper) 158
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 156
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 153
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 151
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 150
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 147
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 145
Microwave FET model identification based on vector intermodulation measurements 142
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 133
Non-linear look-up table modeling of GaAs HEMTs for mixer application 132
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 126
Extended operation of class-F power amplifiers using input waveform engineering 125
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 124
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 124
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 119
null 110
null 108
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 106
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 105
null 102
Impact of transistor model uncertainty on microwave load-pull simulations 101
null 100
null 97
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 94
A new description of fast charge-trapping effects in GaN FETs 93
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 90
null 82
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 81
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 80
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 79
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 77
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 74
A neural network approach for nonlinear modelling of LDMOSFETs 73
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 69
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 68
An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 67
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 65
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 63
null 63
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 63
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 62
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 61
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 54
Maximizing the benefit of existing equipment for nonlinear and communication measurements 51
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 50
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 46
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 45
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 45
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 44
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 43
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 42
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 42
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 42
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 42
Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 41
Gate waveform effects on high-efficiency PA design: An experimental validation 40
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 37
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 33
Totale 7.507
Salva come PNG Salva come JPEG
Categoria #
all - tutte 38.542
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 38.542
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021403 0 0 0 0 0 53 50 79 21 86 52 62
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/20251.243 25 33 98 17 224 26 60 129 147 164 229 91
2025/20261.901 280 218 406 379 529 89 0 0 0 0 0 0
Totale 7.507