SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

BOSI, Gianni
 Distribuzione geografica
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Continente #
NA - Nord America 2.992
EU - Europa 800
AS - Asia 339
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 2
SA - Sud America 2
Totale 4.138
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Nazione #
US - Stati Uniti d'America 2.987
IT - Italia 310
CN - Cina 228
PL - Polonia 166
UA - Ucraina 112
TR - Turchia 100
DE - Germania 66
SE - Svezia 53
GB - Regno Unito 49
FI - Finlandia 25
CA - Canada 5
FR - Francia 5
HK - Hong Kong 4
NL - Olanda 4
AT - Austria 3
BG - Bulgaria 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BR - Brasile 2
RU - Federazione Russa 2
VN - Vietnam 2
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
ID - Indonesia 1
IE - Irlanda 1
IN - India 1
JP - Giappone 1
MY - Malesia 1
NZ - Nuova Zelanda 1
SG - Singapore 1
Totale 4.138
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Città #
Fairfield 510
Woodbridge 372
Ashburn 298
Houston 275
Ferrara 189
Seattle 186
Wilmington 171
Cambridge 170
Warsaw 166
Chandler 157
Jacksonville 150
Ann Arbor 140
Nanjing 53
Izmir 47
Princeton 47
Beijing 43
Dearborn 33
Shanghai 29
San Diego 26
Bologna 25
Boardman 24
Nanchang 20
Addison 16
Milan 15
Shenyang 15
Washington 14
Kunming 11
Mountain View 9
Des Moines 8
Ferrara di Monte Baldo 8
Norwalk 8
Tianjin 8
Auburn Hills 7
Hebei 7
Jiaxing 7
Los Angeles 7
Jinan 6
London 6
Orange 6
Changsha 5
Toronto 5
Cagliari 4
Falls Church 4
Hong Kong 4
Settimo Milanese 4
Zhengzhou 4
Amsterdam 3
Indiana 3
Massapequa 3
Redwood City 3
Vancouver 3
Vienna 3
Chicago 2
Dong Ket 2
Haikou 2
Kilburn 2
Modena 2
Naples 2
Ningbo 2
Saint Paul 2
San Mateo 2
Taiyuan 2
Acton 1
Baotou 1
Bath 1
Bremen 1
Buckeye 1
Changchun 1
Chengdu 1
Christchurch 1
Den Haag 1
Dublin 1
Florence 1
Fuzhou 1
Guangzhou 1
Hangzhou 1
Hefei 1
Istanbul 1
Jakarta 1
Lanzhou 1
Leipzig 1
Messina 1
Moscow 1
New Orleans 1
New York 1
Newcastle upon Tyne 1
Nürnberg 1
Orlando 1
Paris 1
Pisa 1
Prescot 1
Pune 1
Redmond 1
Rome 1
San Martino in Rio 1
Sao Jose do Mantimento 1
Secaucus 1
Selangor 1
Sofia 1
Somerville 1
Totale 3.395
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Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 171
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 164
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 131
Extremely Low-Frequency Measurements Using an Active Bias Tee 126
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 120
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 118
Behavioral Modeling of GaN FETs: a Load-Line Approach 117
null 110
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 110
null 108
Linear versus nonlinear de-embedding: Experimental investigation 107
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 106
A GaN power amplifier for 100 VDC bus in GPS L-band 106
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 104
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 104
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 103
null 102
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 102
Microwave FET model identification based on vector intermodulation measurements 100
Evaluation of FET performance and restrictions by low-frequency measurements 100
Waveform engineering: State-of-the-art and future trends (invited paper) 100
null 100
null 97
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 96
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 96
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 95
75-VDC GaN technology investigation from a degradation perspective 94
Non-linear look-up table modeling of GaAs HEMTs for mixer application 93
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 92
Extended operation of class-F power amplifiers using input waveform engineering 86
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 84
null 82
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 75
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 74
Impact of transistor model uncertainty on microwave load-pull simulations 73
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 66
null 63
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 59
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 57
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 48
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 43
Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 28
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 25
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 21
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 19
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 18
A neural network approach for nonlinear modelling of LDMOSFETs 18
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 18
Maximizing the benefit of existing equipment for nonlinear and communication measurements 17
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 17
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 15
A new description of fast charge-trapping effects in GaN FETs 15
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 14
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 12
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 12
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 9
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 7
Gate waveform effects on high-efficiency PA design: An experimental validation 5
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 5
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 2
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 1
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 1
Totale 4.261
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Categoria #
all - tutte 15.563
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.563
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019485 0 0 0 0 0 0 0 0 0 122 165 198
2019/20201.119 156 49 41 158 81 128 125 121 101 78 51 30
2020/2021684 43 85 33 73 47 53 50 79 21 86 52 62
2021/2022430 15 27 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024294 28 56 33 21 34 51 17 22 7 25 0 0
Totale 4.261