SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

BOSI, Gianni
 Distribuzione geografica
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Continente #
NA - Nord America 5.043
AS - Asia 2.540
EU - Europa 1.348
SA - Sud America 499
Continente sconosciuto - Info sul continente non disponibili 183
AF - Africa 66
OC - Oceania 2
Totale 9.681
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Nazione #
US - Stati Uniti d'America 4.899
SG - Singapore 1.014
CN - Cina 560
IT - Italia 476
BR - Brasile 398
HK - Hong Kong 270
VN - Vietnam 250
PL - Polonia 190
UA - Ucraina 130
DE - Germania 116
TR - Turchia 111
GB - Regno Unito 90
JP - Giappone 84
FR - Francia 76
RU - Federazione Russa 72
CA - Canada 69
SE - Svezia 65
BD - Bangladesh 58
IN - India 51
MX - Messico 47
AR - Argentina 34
FI - Finlandia 34
ID - Indonesia 24
ZA - Sudafrica 24
CO - Colombia 18
EC - Ecuador 17
NL - Olanda 17
AT - Austria 16
ES - Italia 16
TW - Taiwan 15
LT - Lituania 14
UZ - Uzbekistan 13
VE - Venezuela 13
IQ - Iraq 12
MA - Marocco 11
MY - Malesia 11
PK - Pakistan 8
SA - Arabia Saudita 8
TN - Tunisia 8
EG - Egitto 7
JO - Giordania 7
PE - Perù 7
KR - Corea 6
OM - Oman 6
AE - Emirati Arabi Uniti 5
AZ - Azerbaigian 5
CH - Svizzera 5
CL - Cile 5
CR - Costa Rica 5
DZ - Algeria 5
PH - Filippine 5
BG - Bulgaria 4
CZ - Repubblica Ceca 4
HN - Honduras 4
IE - Irlanda 4
JM - Giamaica 4
KE - Kenya 4
NP - Nepal 4
UY - Uruguay 4
AL - Albania 3
BE - Belgio 3
IL - Israele 3
RS - Serbia 3
SV - El Salvador 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
GE - Georgia 2
GT - Guatemala 2
NI - Nicaragua 2
PA - Panama 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AO - Angola 1
AU - Australia 1
BB - Barbados 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BS - Bahamas 1
CI - Costa d'Avorio 1
DK - Danimarca 1
DM - Dominica 1
ET - Etiopia 1
EU - Europa 1
GR - Grecia 1
HR - Croazia 1
LV - Lettonia 1
LY - Libia 1
ME - Montenegro 1
MK - Macedonia 1
MM - Myanmar 1
MZ - Mozambico 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
PY - Paraguay 1
QA - Qatar 1
SI - Slovenia 1
Totale 9.499
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Città #
Singapore 590
Ashburn 572
Fairfield 510
Woodbridge 372
San Jose 358
Houston 282
Hong Kong 263
Ferrara 225
Santa Clara 193
Council Bluffs 191
Seattle 191
Warsaw 186
Beijing 181
Wilmington 173
Cambridge 170
Chandler 157
Jacksonville 150
Dallas 149
Ann Arbor 140
Los Angeles 86
Tokyo 81
Hanoi 69
Ho Chi Minh City 64
Lauterbourg 57
Nanjing 53
Izmir 48
Princeton 47
The Dalles 39
Bologna 38
Mexico City 37
New York 37
Milan 35
Toronto 35
Dearborn 34
Shanghai 34
São Paulo 32
Chicago 31
Boardman 29
San Diego 28
Hefei 25
Nanchang 20
San Francisco 20
Orem 18
Washington 17
Addison 16
Brooklyn 16
London 16
Moscow 16
Rio de Janeiro 16
Chennai 15
Haiphong 15
Shenyang 15
Frankfurt am Main 14
Jakarta 14
Rome 14
Taipei 14
Amsterdam 12
Kunming 12
Stockholm 12
Da Nang 11
Denver 11
Johannesburg 11
Salt Lake City 10
Columbus 9
Curitiba 9
Guayaquil 9
Mountain View 9
Norwalk 9
Tianjin 9
Assago 8
Atlanta 8
Belo Horizonte 8
Buffalo 8
Charlotte 8
Des Moines 8
Ferrara di Monte Baldo 8
Tashkent 8
Vienna 8
Amman 7
Auburn Hills 7
Boston 7
Bremen 7
Guangzhou 7
Guarulhos 7
Hebei 7
Hải Dương 7
Jiaxing 7
Medellín 7
Mumbai 7
Zhengzhou 7
Baghdad 6
Biên Hòa 6
Brasília 6
Can Tho 6
Caracas 6
Changsha 6
Falkenstein 6
Jinan 6
Maceió 6
Manchester 6
Totale 6.597
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Nome #
NONLINEAR TRANSISTOR MODELS AND DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 306
Nonlinear-embedding design methodology oriented to LDMOS power amplifiers 288
A GaN power amplifier for 100 VDC bus in GPS L-band 214
Assessing GaN FET Performance Degradation in Power Amplifiers for Pulsed Radar Systems 213
75-VDC GaN technology investigation from a degradation perspective 212
Extremely low-frequency measurements using an active bias tee 207
Solid-state RF power amplifiers for ISM CW applications based on 100 V GaN technology 202
Behavioral Modeling of GaN FETs: a Load-Line Approach 200
Identification of the optimum operation for GaN HEMTs in high-power amplifiers 199
Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance 199
Linear versus nonlinear de-embedding: Experimental investigation 197
Waveform engineering: State-of-the-art and future trends (invited paper) 196
Evaluation of FET performance and restrictions by low-frequency measurements 195
Nonlinear modeling of GaAs pHEMTs for millimeter-wave mixer design 192
Fast extraction of accurate I/V models for harmonically-tuned power amplifier design 183
Evaluation of high-voltage transistor reliability under nonlinear dynamic operation 183
Microwave FET model identification based on vector intermodulation measurements 181
Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F Amplifiers 181
Comparison of GaN HEMT Technology Processes by Large-Signal Low-Frequency Measurements 178
Characterization of charge-trapping effects in GaN FETs through low-frequency measurements 176
Theoretical Consideration on Harmonic Manipulated Amplifiers Based on Experimental Data 173
Transistor Vector Load-Pull Characterization for Millimeter-Wave Power Amplifier Design 171
An ultra-wideband sensing board for radio frequency front-end in IoT transmitters 159
Extended operation of class-F power amplifiers using input waveform engineering 152
An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters 152
Load-Pull Measurements Oriented to Harmonically-Tuned Power Amplifier Design 145
Non-linear look-up table modeling of GaAs HEMTs for mixer application 140
Nonlinear modeling of LDMOS transistors for high-power FM transmitters 137
Impact of microwave measurement uncertainty on the Nonlinear Embedding procedure 136
A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations 135
Influence of the Gate Current Dynamic Behaviour on GaAs HEMT Reliability Issues 132
A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) 131
GaN FET Load-Pull Data in Circuit Simulators: a Comparative Study 127
GaN HEMT Model with Enhanced Accuracy under Back-off Operation 127
A New Calibration Technique of Electromagnetic Simulators for Accurate Analyses of Microwave Components on Epitaxial Wafers 125
200-W GaN PA Design Based on Accurate Multicell Transistor Modeling 125
A new description of fast charge-trapping effects in GaN FETs 124
A Load–Pull Characterization Technique Accounting for Harmonic Tuning 117
Impact of transistor model uncertainty on microwave load-pull simulations 117
Advanced Measurement Techniques for Nonlinear Modelling of GaN HEMTs: From L-band to mm-Wave Applications 113
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Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection 107
A neural network approach for nonlinear modelling of LDMOSFETs 107
A Thorough Evaluation of GaN HEMT Degradation under Realistic Power Amplifier Operation 106
150-nm GaN HEMT Degradation under Realistic Load-Line Operation 104
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An Overview of the Impact of the Temperature on the Small- and Large-Signal Performance of 0.15-μm Microwave GaN HEMTs 95
Active Balun Design for Next-Generation Telecom Satellite Frequency Converters 94
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design 90
C-Band Power Amplifier Design Based on Low-Frequency Waveform Engineering 90
An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT 88
On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past 88
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Evaluation of Microwave Transistor Degradation Using Low-Frequency Time-Domain Measurements 80
Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22and h21: An Effective Machine Learning Approach 77
Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers 76
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks 74
Maximizing the benefit of existing equipment for nonlinear and communication measurements 71
Optimal Coupling for the Reduction of bimodality in 850nm-VCSEL-based Radio-over-G.652-Fiber 70
Exploitability of Butt-Coupling between Single Mode/Multi Mode VCSEL and G.652 SSMF for future Green Radio-over-Fiber Infrastructures 70
Robustness Validation of a mm-Wave Model based on GRU Neural Networks for a GaN Power HEMT 68
Experimental Validation of Class F Waveform Engineering in Class C Biasing Condition 68
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling 68
Experimental Investigation on Class-E and Class-F-1 Operation under Square-Waveform Excitation 67
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Attractive Features of Butt Coupling between Single/Multi Mode GaAs-VCSELs and SSMF for Green, Low-cost Radio-over-Fiber Systems 62
Nonlinear Modelling of GaN Transistors: Behavioural and Analytical Approaches 61
100W and 80% Efficiency GaN PA for VHF Space-Borne Earth Sensing Applications 58
Gate waveform effects on high-efficiency PA design: An experimental validation 58
mm-Wave GaN HEMT Technology: Advances, Experiments, and Analysis 55
Characterization and Modeling of Dual-Input Doherty Power Amplifier for High Efficiency and Bandwidth 44
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology 42
Rethinking Microwave Power-Bar Characterization 31
800 W Efficient GaN SSPA for VHF Space Radar 10
Totale 9.681
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Categoria #
all - tutte 48.315
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.315
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022388 0 0 28 5 24 29 19 31 22 46 52 132
2022/2023439 48 0 10 30 66 84 30 50 73 4 32 12
2023/2024396 28 56 33 21 34 51 17 22 7 26 16 85
2024/20251.243 25 33 98 17 224 26 60 129 147 164 229 91
2025/20263.569 280 218 406 379 529 236 426 167 342 377 140 69
2026/2027506 163 227 116 0 0 0 0 0 0 0 0 0
Totale 9.681