In this paper, a characterization procedure for III-V compound semiconductor technology is proposed, with the aim of investigating the performance of state-of-the-art transistors for mm-wave applications. The whole procedure has been successfully applied to a 0.1-μm GaAs pHEMT process, which was characterized under DC, small- and large-signal operations, after a first stress experiment necessary to assess its robustness and stability.
Characterization Procedure for Effective Evaluation of III-V Compound Semiconductor Technology
Bosi G.;Crupi G.;Raffo A.;Vannini G.Ultimo
2025
Abstract
In this paper, a characterization procedure for III-V compound semiconductor technology is proposed, with the aim of investigating the performance of state-of-the-art transistors for mm-wave applications. The whole procedure has been successfully applied to a 0.1-μm GaAs pHEMT process, which was characterized under DC, small- and large-signal operations, after a first stress experiment necessary to assess its robustness and stability.File in questo prodotto:
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