We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.
Impact of transistor model uncertainty on microwave load-pull simulations
Bosi, Gianni;Raffo, Antonio;Vannini, Giorgio;
2017
Abstract
We propagate the uncertainty of measurements used for the identification of a transistor nonlinear model to microwave load-pull simulations. The results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.File in questo prodotto:
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