In this paper, a nonlinear transistor model extraction technique oriented to E-band power amplifier design is discussed. Two models are extracted, based on analytical functions and look-up-tables, respectively. The latter was used for the design of two power amplifiers (PAs) covering the bandwidths 71-76 and 81-86 GHz. The models have been fully validated by comparing their predictions with measurements carried out on the realized MMIC PAs.
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling
Raffo A.
;Bosi G.;Vannini G.
2021
Abstract
In this paper, a nonlinear transistor model extraction technique oriented to E-band power amplifier design is discussed. Two models are extracted, based on analytical functions and look-up-tables, respectively. The latter was used for the design of two power amplifiers (PAs) covering the bandwidths 71-76 and 81-86 GHz. The models have been fully validated by comparing their predictions with measurements carried out on the realized MMIC PAs.File in questo prodotto:
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