In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5x1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.

Gate waveform effects on high-efficiency PA design: An experimental validation

BOSI, Gianni;RAFFO, Antonio;VANNINI, Giorgio;
2014

Abstract

In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5x1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.
2014
9782874870361
HEMTs; power amplifiers; waveform engineering; Computer Networks and Communications; Hardware and Architecture; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2336319
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