In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5x1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.
Gate waveform effects on high-efficiency PA design: An experimental validation
BOSI, Gianni;RAFFO, Antonio;VANNINI, Giorgio;
2014
Abstract
In this paper, an experimental validation about the benefit of the input harmonic manipulation on the performance of a microwave power amplifier is presented. With the support of low-frequency measurements on a 0.5x1000 μm2 GaN HEMT, the importance of synthesizing the correct input waveform at the intrinsic section of the device is highlighted. A class-AB tuned-load amplifier has been considered as a case study.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.