SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

CHIMENTON, Andrea
 Distribuzione geografica
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Continente #
NA - Nord America 4.272
AS - Asia 1.672
EU - Europa 868
SA - Sud America 308
AF - Africa 31
AN - Antartide 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.153
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Nazione #
US - Stati Uniti d'America 4.177
SG - Singapore 647
CN - Cina 563
BR - Brasile 267
UA - Ucraina 240
HK - Hong Kong 163
DE - Germania 141
GB - Regno Unito 141
TR - Turchia 117
IT - Italia 92
VN - Vietnam 91
FI - Finlandia 62
RU - Federazione Russa 51
MX - Messico 49
SE - Svezia 45
CA - Canada 37
FR - Francia 25
IN - India 22
PL - Polonia 18
ZA - Sudafrica 18
AR - Argentina 17
ES - Italia 14
BD - Bangladesh 12
JP - Giappone 12
NL - Olanda 12
BE - Belgio 10
IQ - Iraq 7
PY - Paraguay 7
EC - Ecuador 6
ID - Indonesia 6
MA - Marocco 5
AE - Emirati Arabi Uniti 4
JO - Giordania 4
KR - Corea 4
LT - Lituania 4
CZ - Repubblica Ceca 3
DO - Repubblica Dominicana 3
EG - Egitto 3
GR - Grecia 3
KE - Kenya 3
NP - Nepal 3
VE - Venezuela 3
BO - Bolivia 2
CH - Svizzera 2
CO - Colombia 2
GT - Guatemala 2
IL - Israele 2
KZ - Kazakistan 2
PE - Perù 2
PK - Pakistan 2
AQ - Antartide 1
BH - Bahrain 1
CL - Cile 1
CY - Cipro 1
ET - Etiopia 1
EU - Europa 1
GD - Grenada 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
KG - Kirghizistan 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
MK - Macedonia 1
OM - Oman 1
PA - Panama 1
PT - Portogallo 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
UZ - Uzbekistan 1
Totale 7.153
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Città #
Fairfield 573
Woodbridge 492
Singapore 400
Ashburn 323
Houston 314
Jacksonville 249
Seattle 218
Santa Clara 217
Ann Arbor 201
Cambridge 195
Wilmington 193
Beijing 191
Hong Kong 163
Chandler 146
Nanjing 82
Izmir 77
Los Angeles 55
Princeton 50
San Diego 48
Addison 47
Boardman 45
Ho Chi Minh City 39
New York 38
Mexico City 34
Milan 32
Dallas 31
Ferrara 31
Nanchang 29
Shenyang 27
Shanghai 25
São Paulo 25
Hanoi 24
Chicago 22
Brooklyn 19
London 19
Jiaxing 18
Moscow 18
Ottawa 18
The Dalles 18
Munich 16
Warsaw 16
Boston 15
Hefei 15
Orem 15
Changsha 14
San Francisco 13
Tianjin 13
Auburn Hills 12
Poplar 12
Tokyo 12
Denver 11
Helsinki 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Amsterdam 9
Chennai 9
Falkenstein 9
Hebei 9
Johannesburg 9
Settimo Milanese 9
Brasília 8
Mountain View 8
Ningbo 8
Xian 8
Curitiba 7
Dearborn 7
Manchester 7
Montreal 7
Redwood City 7
San Mateo 7
Atlanta 6
Belo Horizonte 6
Falls Church 6
Verona 6
Frankfurt am Main 5
Haiphong 5
Indiana 5
Kunming 5
Norwalk 5
Phoenix 5
Amman 4
Ankara 4
Campinas 4
Guangzhou 4
Jinan 4
Kansas City 4
Manaus 4
Philadelphia 4
Rome 4
Salt Lake City 4
San Jose 4
Zhengzhou 4
Athens 3
Baghdad 3
Blumenau 3
Calgary 3
Changchun 3
Charlotte 3
Ciudad del Este 3
Totale 5.204
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Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 202
Constant charge erasing scheme for Flash Memories 188
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 185
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 182
Erratic bits in flash memories under Fowler-Nordheim programming 180
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 180
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 178
Overerase Phenomena: An Insight into Flash memory Reliability 178
Statistical Methodologies for Integrated Circuits Design 175
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 173
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 171
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 171
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 167
Erratic bits in Flash memories under Fowler-Nordheim programming 166
A New Analytical Model of the Erasing Operation in Phase Change Memories 166
Electrical Characterization and Modeling of Phase Change Memory arrays 165
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 165
Monte-Carlo Simulations of Flash Memory Array Retention 163
Reliability and performance characterization of a mems-based non-volatile switch 159
Dynamics of Fast-Erasing Bits in Flash Memories 157
Analysis of Erratic Bits in FLASH Memories 157
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 156
Analysis of Erratic Bits in Flash Memories 155
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 150
Reliability of erasing operation in NOR-Flash memories 149
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 148
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 145
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 144
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 141
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 139
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 139
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 137
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 137
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 134
Drain-accelerated degradation of tunnel oxides in Flash memories 134
Reliability of Floating Gate Memories 132
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 130
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 128
Affidabilità di sistemi wireless 127
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 124
Reliability in Wireless Systems 121
Experimental characterization of SET Seasoning on Phase Change Memory arrays 121
Ultra-short pulses improving performance and reliability in flash memories 116
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 114
Erratic erase in flash memories - Part II: Dependence on operating conditions 110
Generation rate of Erratic bits in Flash Memories 106
Reliability of NAND Flash Memories 95
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 68
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 54
Totale 7.182
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Categoria #
all - tutte 32.051
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.102
Totale 34.153
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021371 0 0 0 0 0 74 31 78 17 82 61 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20261.716 254 173 249 431 507 102 0 0 0 0 0 0
Totale 7.182