CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 3.289
EU - Europa 610
AS - Asia 422
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.323
Nazione #
US - Stati Uniti d'America 3.272
CN - Cina 310
UA - Ucraina 219
TR - Turchia 105
DE - Germania 98
GB - Regno Unito 97
IT - Italia 83
FI - Finlandia 52
SE - Svezia 34
CA - Canada 17
BE - Belgio 10
FR - Francia 8
RU - Federazione Russa 6
KR - Corea 4
CZ - Repubblica Ceca 1
ES - Italia 1
EU - Europa 1
HU - Ungheria 1
JP - Giappone 1
LK - Sri Lanka 1
MA - Marocco 1
TW - Taiwan 1
Totale 4.323
Città #
Fairfield 556
Woodbridge 485
Houston 307
Jacksonville 242
Seattle 212
Ashburn 207
Cambridge 192
Ann Arbor 189
Wilmington 187
Chandler 140
Nanjing 81
Izmir 74
Beijing 61
Princeton 49
San Diego 48
Addison 46
Boardman 37
Ferrara 31
Milan 29
Nanchang 29
Shenyang 27
Shanghai 19
Jiaxing 18
Ottawa 17
Changsha 13
Los Angeles 13
Auburn Hills 11
Brussels 10
Settimo Milanese 9
Tianjin 9
Hebei 8
London 8
Mountain View 8
Ningbo 8
Xian 8
Dearborn 7
Redwood City 7
San Mateo 7
Falls Church 6
Helsinki 5
Indiana 5
Kunming 5
Norwalk 5
Verona 5
Jinan 4
Zhengzhou 4
Changchun 3
Guangzhou 3
Orange 3
Philadelphia 3
Bologna 2
Chicago 2
Hangzhou 2
New York 2
Taizhou 2
Venice 2
Acton 1
Budapest 1
Chiswick 1
Dambulla 1
Des Moines 1
Detroit 1
Dresden 1
Izhevsk 1
Kilburn 1
Lanzhou 1
Madrid 1
Qingdao 1
Redmond 1
Saint Petersburg 1
San Jose 1
Simi Valley 1
Solingen 1
Southwark 1
Taipei 1
Tappahannock 1
Tokyo 1
Wandsworth 1
Washington 1
Yellow Springs 1
Zlatoust 1
Totale 3.497
Nome #
Constant charge erasing scheme for Flash Memories 121
Overerase Phenomena: An Insight into Flash memory Reliability 120
Statistical Methodologies for Integrated Circuits Design 118
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 117
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 116
Erratic bits in flash memories under Fowler-Nordheim programming 111
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 111
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 109
Reliability and performance characterization of a mems-based non-volatile switch 106
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 106
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 105
Monte-Carlo Simulations of Flash Memory Array Retention 104
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 104
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 103
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 102
Reliability of erasing operation in NOR-Flash memories 101
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 100
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 99
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 98
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 98
Erratic bits in Flash memories under Fowler-Nordheim programming 96
Dynamics of Fast-Erasing Bits in Flash Memories 96
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 96
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 96
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 95
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 95
A New Analytical Model of the Erasing Operation in Phase Change Memories 93
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 93
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 92
Electrical Characterization and Modeling of Phase Change Memory arrays 92
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 92
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 91
Analysis of Erratic Bits in Flash Memories 91
Reliability of Floating Gate Memories 90
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 86
Ultra-short pulses improving performance and reliability in flash memories 82
Analysis of Erratic Bits in FLASH Memories 80
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 79
Drain-accelerated degradation of tunnel oxides in Flash memories 79
Reliability in Wireless Systems 77
Experimental characterization of SET Seasoning on Phase Change Memory arrays 75
Erratic Erase in Flash Memories (Part II): Dependence on Operating Conditions 67
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 66
Affidabilità di sistemi wireless 58
Reliability of NAND Flash Memories 55
Generation rate of Erratic bits in Flash Memories 53
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 34
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 4
Totale 4.352
Categoria #
all - tutte 15.152
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 908
Totale 16.060


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019617 0 0 0 0 0 0 0 0 0 143 187 287
2019/20201.210 212 45 51 175 87 121 119 126 96 95 56 27
2020/2021605 64 71 13 76 19 73 31 75 17 79 60 27
2021/2022559 13 81 61 11 13 23 33 26 15 36 70 177
2022/2023410 49 2 13 45 60 75 27 35 62 2 27 13
2023/2024129 36 23 6 8 5 5 6 20 7 13 0 0
Totale 4.352