CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 4.806
AS - Asia 2.191
EU - Europa 957
SA - Sud America 367
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 30
AN - Antartide 1
Totale 8.406
Nazione #
US - Stati Uniti d'America 4.689
SG - Singapore 810
CN - Cina 633
BR - Brasile 295
UA - Ucraina 241
VN - Vietnam 227
HK - Hong Kong 184
GB - Regno Unito 149
DE - Germania 145
TR - Turchia 129
IT - Italia 107
FR - Francia 71
FI - Finlandia 64
JP - Giappone 55
MX - Messico 55
RU - Federazione Russa 52
CA - Canada 45
SE - Svezia 45
IN - India 41
AR - Argentina 25
BD - Bangladesh 25
ZA - Sudafrica 24
PL - Polonia 19
ES - Italia 16
NL - Olanda 15
ID - Indonesia 14
IQ - Iraq 14
EC - Ecuador 13
BE - Belgio 10
CO - Colombia 9
KE - Kenya 9
PK - Pakistan 9
PY - Paraguay 8
VE - Venezuela 8
NP - Nepal 6
DO - Repubblica Dominicana 5
EG - Egitto 5
KR - Corea 5
LT - Lituania 5
MA - Marocco 5
AE - Emirati Arabi Uniti 4
CR - Costa Rica 4
JO - Giordania 4
TN - Tunisia 4
BO - Bolivia 3
CL - Cile 3
CZ - Repubblica Ceca 3
GR - Grecia 3
KZ - Kazakistan 3
MY - Malesia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
AL - Albania 2
CH - Svizzera 2
DZ - Algeria 2
ET - Etiopia 2
GT - Guatemala 2
HU - Ungheria 2
IL - Israele 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AM - Armenia 1
AQ - Antartide 1
AZ - Azerbaigian 1
BH - Bahrain 1
CY - Cipro 1
EE - Estonia 1
EU - Europa 1
GD - Grenada 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
LY - Libia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 8.377
Città #
Fairfield 573
Singapore 546
Woodbridge 492
Ashburn 382
Houston 314
San Jose 289
Jacksonville 251
Santa Clara 221
Seattle 220
Ann Arbor 201
Beijing 198
Cambridge 195
Wilmington 194
Hong Kong 178
Chandler 146
Ho Chi Minh City 84
Nanjing 82
Izmir 77
Los Angeles 60
Tokyo 55
Hanoi 52
Princeton 50
San Diego 48
Addison 47
Dallas 46
Boardman 45
New York 43
Lauterbourg 41
Mexico City 35
Milan 35
Ferrara 31
São Paulo 31
Nanchang 29
Shanghai 27
Shenyang 27
Chicago 25
Orem 25
Council Bluffs 23
The Dalles 21
Brooklyn 20
London 20
Jiaxing 18
Moscow 18
Ottawa 18
Warsaw 17
Hefei 16
Munich 16
Boston 15
San Francisco 15
Changsha 14
Chennai 13
Haiphong 13
Helsinki 13
Tianjin 13
Auburn Hills 12
Denver 12
Johannesburg 12
Poplar 12
Amsterdam 11
Manchester 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Falkenstein 9
Hebei 9
Montreal 9
Nairobi 9
Settimo Milanese 9
Atlanta 8
Brasília 8
Mountain View 8
Ningbo 8
Xian 8
Curitiba 7
Dearborn 7
Redwood City 7
Rome 7
San Mateo 7
Baghdad 6
Belo Horizonte 6
Bologna 6
Da Nang 6
Falls Church 6
Frankfurt am Main 6
Verona 6
Indiana 5
Kunming 5
Norwalk 5
Phoenix 5
Toronto 5
Amman 4
Ankara 4
Campinas 4
Ciudad del Este 4
Fortaleza 4
Guangzhou 4
Istanbul 4
Jinan 4
Kansas City 4
Lahore 4
Totale 6.007
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 238
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 223
Constant charge erasing scheme for Flash Memories 221
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 218
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 214
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 212
Erratic bits in flash memories under Fowler-Nordheim programming 209
Overerase Phenomena: An Insight into Flash memory Reliability 209
A New Analytical Model of the Erasing Operation in Phase Change Memories 203
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 202
Statistical Methodologies for Integrated Circuits Design 201
Monte-Carlo Simulations of Flash Memory Array Retention 201
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 199
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 198
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 197
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 191
Erratic bits in Flash memories under Fowler-Nordheim programming 187
Electrical Characterization and Modeling of Phase Change Memory arrays 186
Analysis of Erratic Bits in FLASH Memories 183
Reliability and performance characterization of a mems-based non-volatile switch 182
Dynamics of Fast-Erasing Bits in Flash Memories 179
Analysis of Erratic Bits in Flash Memories 175
Affidabilità di sistemi wireless 172
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 172
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 171
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 170
Reliability of erasing operation in NOR-Flash memories 168
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 168
Reliability of Floating Gate Memories 167
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 167
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 164
Drain-accelerated degradation of tunnel oxides in Flash memories 162
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 158
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 157
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 156
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 155
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 149
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 149
Reliability in Wireless Systems 147
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 147
Experimental characterization of SET Seasoning on Phase Change Memory arrays 139
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 138
Generation rate of Erratic bits in Flash Memories 131
Ultra-short pulses improving performance and reliability in flash memories 130
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 130
Reliability of NAND Flash Memories 127
Erratic erase in flash memories - Part II: Dependence on operating conditions 126
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 87
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 71
Totale 8.406
Categoria #
all - tutte 36.670
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.506
Totale 39.176


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20262.865 254 173 249 431 507 166 302 134 248 290 87 24
2026/202775 75 0 0 0 0 0 0 0 0 0 0 0
Totale 8.406