CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 5.018
AS - Asia 2.205
EU - Europa 975
SA - Sud America 372
AF - Africa 54
Continente sconosciuto - Info sul continente non disponibili 30
AN - Antartide 1
Totale 8.655
Nazione #
US - Stati Uniti d'America 4.894
SG - Singapore 814
CN - Cina 639
BR - Brasile 296
UA - Ucraina 241
VN - Vietnam 228
HK - Hong Kong 184
GB - Regno Unito 152
DE - Germania 147
TR - Turchia 129
IT - Italia 112
FR - Francia 72
FI - Finlandia 64
MX - Messico 56
JP - Giappone 55
RU - Federazione Russa 52
SE - Svezia 52
CA - Canada 47
IN - India 41
AR - Argentina 25
BD - Bangladesh 25
ZA - Sudafrica 24
PL - Polonia 19
ES - Italia 16
ID - Indonesia 15
NL - Olanda 15
EC - Ecuador 14
IQ - Iraq 14
CO - Colombia 11
BE - Belgio 10
KE - Kenya 9
PK - Pakistan 9
PY - Paraguay 8
VE - Venezuela 8
KR - Corea 6
NP - Nepal 6
DO - Repubblica Dominicana 5
EG - Egitto 5
LT - Lituania 5
MA - Marocco 5
AE - Emirati Arabi Uniti 4
CR - Costa Rica 4
JO - Giordania 4
TN - Tunisia 4
BO - Bolivia 3
CL - Cile 3
CZ - Repubblica Ceca 3
GR - Grecia 3
GT - Guatemala 3
IL - Israele 3
KZ - Kazakistan 3
MY - Malesia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
AL - Albania 2
CH - Svizzera 2
DZ - Algeria 2
ET - Etiopia 2
GY - Guiana 2
HN - Honduras 2
HU - Ungheria 2
JM - Giamaica 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AM - Armenia 1
AQ - Antartide 1
AZ - Azerbaigian 1
BH - Bahrain 1
CY - Cipro 1
EE - Estonia 1
EU - Europa 1
GD - Grenada 1
HR - Croazia 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
LY - Libia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 8.626
Città #
Fairfield 573
Singapore 546
Woodbridge 492
Ashburn 393
San Jose 334
Houston 315
Jacksonville 251
Santa Clara 231
Seattle 221
Beijing 203
Ann Arbor 201
Cambridge 195
Wilmington 194
Hong Kong 178
Chandler 146
Council Bluffs 110
Ho Chi Minh City 84
Nanjing 82
Izmir 77
Los Angeles 60
Tokyo 55
Hanoi 52
Princeton 50
San Diego 48
Addison 47
Dallas 46
Boardman 45
New York 43
Lauterbourg 41
Mexico City 36
Milan 36
Ferrara 31
São Paulo 31
Nanchang 29
Chicago 27
Shanghai 27
Shenyang 27
Orem 25
The Dalles 21
Brooklyn 20
London 20
Jiaxing 18
Moscow 18
Ottawa 18
Warsaw 17
Hefei 16
Munich 16
Boston 15
San Francisco 15
Changsha 14
Chennai 13
Haiphong 13
Helsinki 13
Tianjin 13
Auburn Hills 12
Denver 12
Johannesburg 12
Poplar 12
Amsterdam 11
Manchester 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Falkenstein 9
Hebei 9
Montreal 9
Nairobi 9
Settimo Milanese 9
Atlanta 8
Brasília 8
Frankfurt am Main 8
Mountain View 8
Ningbo 8
Xian 8
Bologna 7
Curitiba 7
Dearborn 7
Phoenix 7
Redwood City 7
Rome 7
San Mateo 7
Verona 7
Baghdad 6
Belo Horizonte 6
Da Nang 6
Falls Church 6
Indiana 5
Kansas City 5
Kunming 5
Norwalk 5
Toronto 5
Amman 4
Ankara 4
Buffalo 4
Campinas 4
Ciudad del Este 4
Fortaleza 4
Guangzhou 4
Istanbul 4
Jinan 4
Totale 6.178
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 245
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 228
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 226
Constant charge erasing scheme for Flash Memories 225
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 217
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 217
Erratic bits in flash memories under Fowler-Nordheim programming 216
Overerase Phenomena: An Insight into Flash memory Reliability 216
A New Analytical Model of the Erasing Operation in Phase Change Memories 212
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 208
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 207
Statistical Methodologies for Integrated Circuits Design 206
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 206
Monte-Carlo Simulations of Flash Memory Array Retention 203
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 199
Electrical Characterization and Modeling of Phase Change Memory arrays 197
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 193
Erratic bits in Flash memories under Fowler-Nordheim programming 192
Analysis of Erratic Bits in FLASH Memories 188
Reliability and performance characterization of a mems-based non-volatile switch 187
Dynamics of Fast-Erasing Bits in Flash Memories 184
Affidabilità di sistemi wireless 181
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 178
Analysis of Erratic Bits in Flash Memories 178
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 175
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 173
Reliability of erasing operation in NOR-Flash memories 173
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 172
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 172
Drain-accelerated degradation of tunnel oxides in Flash memories 172
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 169
Reliability of Floating Gate Memories 169
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 163
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 161
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 160
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 159
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 155
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 152
Reliability in Wireless Systems 151
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 150
Experimental characterization of SET Seasoning on Phase Change Memory arrays 143
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 140
Ultra-short pulses improving performance and reliability in flash memories 138
Generation rate of Erratic bits in Flash Memories 137
Reliability of NAND Flash Memories 134
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 133
Erratic erase in flash memories - Part II: Dependence on operating conditions 129
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 92
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 74
Totale 8.655
Categoria #
all - tutte 38.226
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.629
Totale 40.855


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022477 0 0 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20262.865 254 173 249 431 507 166 302 134 248 290 87 24
2026/2027324 75 159 90 0 0 0 0 0 0 0 0 0
Totale 8.655