CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 3.376
EU - Europa 627
AS - Asia 488
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.493
Nazione #
US - Stati Uniti d'America 3.359
CN - Cina 317
UA - Ucraina 225
TR - Turchia 108
DE - Germania 101
GB - Regno Unito 98
IT - Italia 87
SG - Singapore 56
FI - Finlandia 53
SE - Svezia 34
CA - Canada 17
BE - Belgio 10
FR - Francia 8
RU - Federazione Russa 6
KR - Corea 4
ES - Italia 2
CZ - Repubblica Ceca 1
EU - Europa 1
HU - Ungheria 1
JP - Giappone 1
LK - Sri Lanka 1
MA - Marocco 1
NL - Olanda 1
TW - Taiwan 1
Totale 4.493
Città #
Fairfield 573
Woodbridge 492
Houston 311
Jacksonville 248
Seattle 216
Ashburn 209
Ann Arbor 201
Cambridge 195
Wilmington 192
Chandler 146
Nanjing 82
Izmir 77
Beijing 61
Princeton 50
San Diego 48
Addison 47
Boardman 45
Ferrara 31
Milan 31
Singapore 30
Nanchang 29
Shenyang 27
Shanghai 23
Jiaxing 18
Ottawa 17
Changsha 13
Los Angeles 13
Auburn Hills 12
Brussels 10
Tianjin 10
Hebei 9
Settimo Milanese 9
London 8
Mountain View 8
Ningbo 8
Xian 8
Dearborn 7
Redwood City 7
San Mateo 7
Falls Church 6
Verona 6
Helsinki 5
Indiana 5
Kunming 5
Norwalk 5
Jinan 4
Zhengzhou 4
Changchun 3
Guangzhou 3
Orange 3
Philadelphia 3
Bologna 2
Chicago 2
Clifton 2
Hangzhou 2
New York 2
Taizhou 2
Venice 2
Acton 1
Budapest 1
Chiswick 1
Dambulla 1
Des Moines 1
Detroit 1
Dresden 1
Izhevsk 1
Kilburn 1
Lanzhou 1
Madrid 1
Qingdao 1
Redmond 1
Rome 1
Saint Petersburg 1
San Jose 1
Santa Clara 1
Santa Cruz de Tenerife 1
Simi Valley 1
Solingen 1
Southwark 1
Taipei 1
Tappahannock 1
Tokyo 1
Wandsworth 1
Washington 1
Yellow Springs 1
Zlatoust 1
Totale 3.622
Nome #
Constant charge erasing scheme for Flash Memories 122
Overerase Phenomena: An Insight into Flash memory Reliability 121
Statistical Methodologies for Integrated Circuits Design 119
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 118
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 117
Erratic bits in flash memories under Fowler-Nordheim programming 112
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 112
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 111
Reliability and performance characterization of a mems-based non-volatile switch 109
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 107
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 106
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 106
Monte-Carlo Simulations of Flash Memory Array Retention 105
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 105
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 104
Reliability of erasing operation in NOR-Flash memories 103
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 101
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 100
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 100
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 99
Dynamics of Fast-Erasing Bits in Flash Memories 98
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 98
Erratic bits in Flash memories under Fowler-Nordheim programming 97
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 97
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 96
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 96
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 96
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 95
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 94
A New Analytical Model of the Erasing Operation in Phase Change Memories 94
Electrical Characterization and Modeling of Phase Change Memory arrays 93
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 93
Reliability of Floating Gate Memories 92
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 92
Analysis of Erratic Bits in Flash Memories 92
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 87
Ultra-short pulses improving performance and reliability in flash memories 84
Analysis of Erratic Bits in FLASH Memories 83
Drain-accelerated degradation of tunnel oxides in Flash memories 81
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 80
Reliability in Wireless Systems 79
Experimental characterization of SET Seasoning on Phase Change Memory arrays 76
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 69
Erratic Erase in Flash Memories (Part II): Dependence on Operating Conditions 68
Affidabilità di sistemi wireless 62
Reliability of NAND Flash Memories 59
Generation rate of Erratic bits in Flash Memories 54
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 35
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 5
Totale 4.522
Categoria #
all - tutte 17.726
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.081
Totale 18.807


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.234 214 46 52 179 89 124 121 129 99 96 57 28
2020/2021621 65 73 13 77 22 74 31 78 17 82 61 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/202522 22 0 0 0 0 0 0 0 0 0 0 0
Totale 4.522