CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 3.356
EU - Europa 645
AS - Asia 418
AF - Africa 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.421
Nazione #
US - Stati Uniti d'America 3.339
CN - Cina 304
UA - Ucraina 225
TR - Turchia 108
GB - Regno Unito 103
DE - Germania 100
IT - Italia 82
FI - Finlandia 53
SE - Svezia 34
BE - Belgio 29
CA - Canada 17
FR - Francia 8
RU - Federazione Russa 6
KR - Corea 4
CZ - Repubblica Ceca 3
ES - Italia 1
EU - Europa 1
HU - Ungheria 1
LK - Sri Lanka 1
MA - Marocco 1
TW - Taiwan 1
Totale 4.421
Città #
Fairfield 573
Woodbridge 492
Houston 311
Jacksonville 248
Seattle 216
Ashburn 209
Ann Arbor 201
Cambridge 195
Wilmington 192
Chandler 146
Nanjing 82
Izmir 77
Beijing 61
Princeton 50
San Diego 48
Addison 47
Boardman 38
Ferrara 31
Brussels 29
Milan 29
Nanchang 29
Shenyang 27
Jiaxing 18
Ottawa 17
Changsha 13
Auburn Hills 12
Shanghai 10
Tianjin 10
Hebei 9
London 9
Settimo Milanese 9
Mountain View 8
Ningbo 8
Xian 8
Dearborn 7
Redwood City 7
San Mateo 7
Falls Church 6
Verona 6
Helsinki 5
Indiana 5
Kunming 5
Norwalk 5
Jinan 4
Philadelphia 4
Zhengzhou 4
Changchun 3
Guangzhou 3
Orange 3
Bologna 2
Brno 2
Chicago 2
Hangzhou 2
New York 2
Taizhou 2
Acton 1
Budapest 1
Chiswick 1
Dambulla 1
Des Moines 1
Detroit 1
Dresden 1
Hounslow 1
Izhevsk 1
Kilburn 1
Lanzhou 1
Los Angeles 1
Madrid 1
New Bedfont 1
Qingdao 1
Redmond 1
Saint Petersburg 1
San Jose 1
Simi Valley 1
Solingen 1
Southwark 1
Taipei 1
Tappahannock 1
Wandsworth 1
Washington 1
Yellow Springs 1
Zlatoust 1
Totale 3.575
Nome #
Constant charge erasing scheme for Flash Memories 124
Overerase Phenomena: An Insight into Flash memory Reliability 123
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 119
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 117
Statistical Methodologies for Integrated Circuits Design 117
Erratic bits in flash memories under Fowler-Nordheim programming 114
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 111
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 108
Reliability and performance characterization of a mems-based non-volatile switch 106
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 105
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 105
Monte-Carlo Simulations of Flash Memory Array Retention 104
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 104
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 103
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 102
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 101
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 101
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 99
Reliability of erasing operation in NOR-Flash memories 99
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 99
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 97
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 96
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 96
Erratic bits in Flash memories under Fowler-Nordheim programming 95
Dynamics of Fast-Erasing Bits in Flash Memories 95
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 95
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 94
Electrical Characterization and Modeling of Phase Change Memory arrays 92
A New Analytical Model of the Erasing Operation in Phase Change Memories 92
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 92
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 92
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 91
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 91
Analysis of Erratic Bits in Flash Memories 91
Reliability of Floating Gate Memories 90
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 88
Ultra-short pulses improving performance and reliability in flash memories 82
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 79
Analysis of Erratic Bits in FLASH Memories 78
Drain-accelerated degradation of tunnel oxides in Flash memories 78
Reliability in Wireless Systems 77
Experimental characterization of SET Seasoning on Phase Change Memory arrays 75
Erratic Erase in Flash Memories (Part II): Dependence on Operating Conditions 66
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 66
Affidabilità di sistemi wireless 56
Reliability of NAND Flash Memories 55
Generation rate of Erratic bits in Flash Memories 53
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 34
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 3
Totale 4.450
Categoria #
all - tutte 14.260
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 828
Totale 15.088


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019680 0 0 0 0 0 0 0 3 49 146 191 291
2019/20201.234 214 46 52 179 89 124 121 129 99 96 57 28
2020/2021621 65 73 13 77 22 74 31 78 17 82 61 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023437 51 2 13 47 62 78 30 38 65 4 31 16
2023/2024121 38 25 9 11 11 5 6 16 0 0 0 0
Totale 4.450