CHIMENTON, Andrea
 Distribuzione geografica
Continente #
NA - Nord America 4.737
AS - Asia 2.180
EU - Europa 947
SA - Sud America 363
AF - Africa 54
AN - Antartide 1
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.283
Nazione #
US - Stati Uniti d'America 4.625
SG - Singapore 808
CN - Cina 630
BR - Brasile 293
UA - Ucraina 241
VN - Vietnam 227
HK - Hong Kong 181
GB - Regno Unito 149
DE - Germania 145
TR - Turchia 129
IT - Italia 102
FR - Francia 69
FI - Finlandia 64
JP - Giappone 55
MX - Messico 54
RU - Federazione Russa 52
SE - Svezia 45
CA - Canada 42
IN - India 41
AR - Argentina 25
BD - Bangladesh 24
ZA - Sudafrica 24
PL - Polonia 18
ES - Italia 15
NL - Olanda 15
IQ - Iraq 14
EC - Ecuador 13
ID - Indonesia 13
BE - Belgio 10
KE - Kenya 9
PK - Pakistan 9
PY - Paraguay 8
VE - Venezuela 8
CO - Colombia 7
DO - Repubblica Dominicana 5
EG - Egitto 5
KR - Corea 5
LT - Lituania 5
MA - Marocco 5
NP - Nepal 5
AE - Emirati Arabi Uniti 4
JO - Giordania 4
TN - Tunisia 4
BO - Bolivia 3
CL - Cile 3
CR - Costa Rica 3
CZ - Repubblica Ceca 3
GR - Grecia 3
KZ - Kazakistan 3
MY - Malesia 3
SA - Arabia Saudita 3
UZ - Uzbekistan 3
CH - Svizzera 2
DZ - Algeria 2
ET - Etiopia 2
GT - Guatemala 2
HU - Ungheria 2
IL - Israele 2
OM - Oman 2
PE - Perù 2
SN - Senegal 2
SY - Repubblica araba siriana 2
TW - Taiwan 2
AL - Albania 1
AM - Armenia 1
AQ - Antartide 1
AZ - Azerbaigian 1
BH - Bahrain 1
CY - Cipro 1
EE - Estonia 1
EU - Europa 1
GD - Grenada 1
GY - Guiana 1
HN - Honduras 1
HR - Croazia 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
KY - Cayman, isole 1
LB - Libano 1
LK - Sri Lanka 1
LY - Libia 1
MK - Macedonia 1
NI - Nicaragua 1
PA - Panama 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 8.283
Città #
Fairfield 573
Singapore 544
Woodbridge 492
Ashburn 379
Houston 314
San Jose 289
Jacksonville 251
Santa Clara 220
Seattle 220
Ann Arbor 201
Beijing 198
Cambridge 195
Wilmington 194
Hong Kong 175
Chandler 146
Ho Chi Minh City 84
Nanjing 82
Izmir 77
Los Angeles 59
Tokyo 55
Hanoi 52
Princeton 50
San Diego 48
Addison 47
Boardman 45
Dallas 44
New York 43
Lauterbourg 41
Mexico City 35
Milan 33
Ferrara 31
Nanchang 29
São Paulo 29
Shanghai 27
Shenyang 27
Chicago 25
Orem 25
The Dalles 21
London 20
Brooklyn 19
Jiaxing 18
Moscow 18
Ottawa 18
Hefei 16
Munich 16
Warsaw 16
Boston 15
San Francisco 15
Changsha 14
Chennai 13
Haiphong 13
Helsinki 13
Tianjin 13
Auburn Hills 12
Denver 12
Johannesburg 12
Poplar 12
Amsterdam 11
Manchester 11
Rio de Janeiro 11
Stockholm 11
Brussels 10
Falkenstein 9
Hebei 9
Montreal 9
Nairobi 9
Settimo Milanese 9
Brasília 8
Mountain View 8
Ningbo 8
Xian 8
Atlanta 7
Curitiba 7
Dearborn 7
Redwood City 7
San Mateo 7
Baghdad 6
Belo Horizonte 6
Bologna 6
Da Nang 6
Falls Church 6
Frankfurt am Main 6
Verona 6
Indiana 5
Kunming 5
Norwalk 5
Phoenix 5
Rome 5
Amman 4
Ankara 4
Campinas 4
Ciudad del Este 4
Fortaleza 4
Guangzhou 4
Istanbul 4
Jinan 4
Kansas City 4
Lahore 4
Manaus 4
Mumbai 4
Totale 5.966
Nome #
A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique 237
Constant charge erasing scheme for Flash Memories 220
A Statistical Model of Erratic Behaviors in Flash Memory Arrays 219
Analysis of Edge Wordline Disturb in Multimegabit Charge Trapping Flash NAND arrays 217
Dielectric reliability for future logic and Non-Volatile Memory applications: a statistical simulation analysis approach 213
A new automated methodology for Random Telegraph Signal identification and characterization: a case study on Phase Change Memory arrays 212
Erratic bits in flash memories under Fowler-Nordheim programming 209
Overerase Phenomena: An Insight into Flash memory Reliability 205
Monte-Carlo Simulations of Flash Memory Array Retention 201
A New Analytical Model of the Erasing Operation in Phase Change Memories 201
Statistical Methodologies for Integrated Circuits Design 200
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 198
Analysis and Optimization of Erasing Waveform in Phase Change Memory Arrays 198
A New Methodology for Two Level Random-Telegraph-Noise Identification and Statistical Analysis 198
Impact of Pulsed Operation on Performance and Reliability of Flash Memories 195
Empirical investigation of SET Seasoning Effects in Phase Change Memory arrays 191
Electrical Characterization and Modeling of Phase Change Memory arrays 185
Erratic bits in Flash memories under Fowler-Nordheim programming 183
Analysis of Erratic Bits in FLASH Memories 179
Reliability and performance characterization of a mems-based non-volatile switch 179
Dynamics of Fast-Erasing Bits in Flash Memories 177
Analysis of Erratic Bits in Flash Memories 175
Threshold voltage spread in Flash memories under a constant DQ erasing scheme 171
Impact of short SET pulse sequence on Electronic Switching in Phase Change Memory arrays 168
Non Volatile Memory Partitioning Scheme for Technology-based Performance-Reliability Trade-off 167
Set of electrical characteristic parameters suitable for reliability analysis of multimegabit Phase Change Memory arrays 166
Affidabilità di sistemi wireless 165
Reliability of erasing operation in NOR-Flash memories 165
Evidence of erratic behaviors in p-channel floating gate memories and cell architectural solution 165
Reliability of Floating Gate Memories 161
Drain-accelerated degradation of tunnel oxides in Flash memories 161
Improving performance and reliability of NOR-Flash arrays by using pulsed operation 159
Erratic Erase in Flash Memories (part I): Basic Experimental and Statistical Characterization 156
Modeling of SET Seasoning Effects in Phase Change Memory Arrays 155
Statistical Modeling of Secondary Path during Erase Operation in Phase Change Memories 155
Impact of Tunnel Oxide Thickness on Erratic Erase in Flash Memories 153
Impact of High Tunneling Electric Fields on Erasing Instabilities in NOR-Flash Memories 148
Flash Memory Reliability: an Improvement Against Erratic Erase Phenomena Using the Constant Charge Erasing Scheme 147
Fast Identification of Critical Electrical Disturbs in Nonvolatile Memories 145
Reliability in Wireless Systems 145
Experimental characterization of SET Seasoning on Phase Change Memory arrays 138
Flash Memory Reliability: an improvement against Erratic Erase phenomena using the Constant Charge Erasing Scheme 137
Reliability of Flash Memory Erasing Operation under High Tunneling Electric Fields 130
Ultra-short pulses improving performance and reliability in flash memories 129
Generation rate of Erratic bits in Flash Memories 129
Erratic erase in flash memories - Part II: Dependence on operating conditions 125
Reliability of NAND Flash Memories 124
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction 85
Anomalous charge loss from Floating-Gate Memory Cells due to heavy ions irradiation 71
Totale 8.312
Categoria #
all - tutte 35.330
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2.392
Totale 37.722


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202128 0 0 0 0 0 0 0 0 0 0 0 28
2021/2022571 13 81 66 11 13 23 33 27 15 36 72 181
2022/2023423 51 2 13 47 62 78 27 36 63 2 29 13
2023/2024185 36 23 6 9 6 5 6 20 7 13 0 54
2024/2025966 29 53 76 4 108 126 57 67 85 114 169 78
2025/20262.846 254 173 249 431 507 166 302 134 248 290 87 5
Totale 8.312