In this work we demonstrate a noticeable reduction of SILC in Flash memories operating in pulsed regime. With the pulsed operation methodology better cycling and data retention features can be achieved, or cell scaling pursued, being reliability no longer a major concern. Benefits have been demonstrated on single cells and large arrays, with oxide thickness down to 3.5 nm. The methodology suits on fully tunnel operating memory architectures.
Pulsed Tunnel Operating Non Volatile Flash Memories with SILC Reduction
CHIMENTON, Andrea;OLIVO, Piero
2006
Abstract
In this work we demonstrate a noticeable reduction of SILC in Flash memories operating in pulsed regime. With the pulsed operation methodology better cycling and data retention features can be achieved, or cell scaling pursued, being reliability no longer a major concern. Benefits have been demonstrated on single cells and large arrays, with oxide thickness down to 3.5 nm. The methodology suits on fully tunnel operating memory architectures.File in questo prodotto:
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