An accurate evaluation of SILC statistics on large Flash memory arrays is crucial for reliability predictions and new technology development. In this paper, we present a Monte-Carlo (MC) simulator and show how it can be reliably used to investigate effects of defect features on VT distribution, and analyze the impact of temperature and voltage accelerated stresses on final VT distribution.
Monte-Carlo Simulations of Flash Memory Array Retention
PADOVANI, Andrea;CHIMENTON, Andrea;
2007
Abstract
An accurate evaluation of SILC statistics on large Flash memory arrays is crucial for reliability predictions and new technology development. In this paper, we present a Monte-Carlo (MC) simulator and show how it can be reliably used to investigate effects of defect features on VT distribution, and analyze the impact of temperature and voltage accelerated stresses on final VT distribution.File in questo prodotto:
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