Erratic Erase in Flash Memories (Part II): Dependence on Operating Conditions

This paper presents experimental results about the erratic erase phenomena occurring in Flash Memories with the aim of providing a deeper insight into the physical nature of the phenomenon and to deepen the comprehension of charge trapping/detrapping dynamics in tunnel oxides during Fowler-Nordheim erase. The results obtained under different operating conditions as Program/Erase cycling, Ultra Violet light exposure, thermal stress and the analysis of the erratic erase behavior varying the erasing conditions and the tunnel oxide thickness, suggested also possible methods that can be used in order to reduce the erratic erase phenomena.