DI FALCO, Sergio
 Distribuzione geografica
Continente #
NA - Nord America 1.025
EU - Europa 356
AS - Asia 175
OC - Oceania 1
Totale 1.557
Nazione #
US - Stati Uniti d'America 1.023
PL - Polonia 136
CN - Cina 116
UA - Ucraina 74
TR - Turchia 55
IT - Italia 44
DE - Germania 32
GB - Regno Unito 26
SE - Svezia 22
FI - Finlandia 17
FR - Francia 2
MX - Messico 2
VN - Vietnam 2
AU - Australia 1
BD - Bangladesh 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
MD - Moldavia 1
TW - Taiwan 1
Totale 1.557
Città #
Fairfield 168
Woodbridge 157
Warsaw 136
Ashburn 102
Jacksonville 88
Houston 86
Ann Arbor 60
Cambridge 48
Chandler 45
Seattle 41
Beijing 40
Wilmington 39
Nanjing 31
Ferrara 21
Izmir 19
Addison 17
Princeton 17
San Diego 12
Boardman 11
Shenyang 10
Nanchang 8
Dearborn 5
Cagliari 4
Hebei 4
Mountain View 4
Redwood City 4
Shanghai 4
Torre del Greco 4
Verona 3
Washington 3
Zhengzhou 3
Auburn Hills 2
Changsha 2
Cinisello Balsamo 2
Dong Ket 2
Guangzhou 2
Indiana 2
Jinan 2
Los Angeles 2
Milan 2
Norwalk 2
Tianjin 2
Changchun 1
Chicago 1
Chisinau 1
Cottbus 1
Des Moines 1
Ensenada 1
Falls Church 1
Fuzhou 1
Greenwich 1
Haikou 1
Helsinki 1
Jiaxing 1
Kunming 1
Lanzhou 1
London 1
Lucca 1
Melzo 1
New York 1
Ningbo 1
Prato 1
Taipei 1
Taizhou 1
Tijuana 1
Torino 1
Totale 1.240
Nome #
DESIGN TECHNIQUES FOR HIGH-EFFICIENCY MICROWAVE POWER AMPLIFIERS 173
Experimental Investigation of LF dispersion and IMD asymmetry within GaN based HEMT technology 122
GaN HEMT large-signal model accounting for both low-frequency dispersion and high-frequency non-quasi-static effects 111
High-Efficiency Broadband Power Amplifier Design Technique Based on a Measured-Load-Line Approach 110
Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects 104
A new approach to Class-E power amplifier design 104
Characterization of GaN HEMT Low-Frequency Dispersion Through a Multi-Harmonic Measurement System 103
null 100
“Hybrid” Approach to Microwave Power Amplifier Design 100
On the evaluation of the high-frequency load line in active devices 96
Analysis of the gate current as a suitable indicator for FET degradation under nonlinear dynamic regime 83
GaN HEMT Nonlinear Characterization for Wideband High-Power Amplifier Design 66
Low-Frequency Waveform Engineering Technique for Class-F Microwave Power Amplifier Design 63
Characterization of Electron Device Breakdown Under Nonlinear Dynamic Operation 63
Class-A Power Amplifier Design Technique Based on Electron Device Low-Frequency Characterization 60
Empirical Investigation on Device-Degradation Indicators Under Nonlinear Dynamic Regime 54
Power Amplifier Design Accounting for Input Large-Signal Matching 53
A Low-Cost and Accurate Technique for the Prediction of Load-Pull Contours 8
Totale 1.573
Categoria #
all - tutte 4.799
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.799


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019123 0 0 0 0 0 0 0 0 0 0 50 73
2019/2020417 69 19 12 57 27 40 32 43 29 36 44 9
2020/2021238 22 23 10 39 19 23 6 32 3 31 17 13
2021/2022174 3 23 15 0 13 5 11 2 8 13 27 54
2022/2023128 20 0 1 13 17 29 2 9 22 3 10 2
2023/202475 10 13 4 2 7 21 0 10 3 5 0 0
Totale 1.573