An active bias tee suitable for small- and largesignal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.
Extremely Low-Frequency Measurements Using an Active Bias Tee
NALLI, Andrea;RAFFO, Antonio;VADALA', Valeria;BOSI, Gianni;VANNINI, Giorgio
2013
Abstract
An active bias tee suitable for small- and largesignal low-frequency (5 Hz to 400 kHz) characterization of electron devices has been designed and manufactured. Different experimental results, carried out on 0.25 μm GaAs and GaN HEMTs, confirm the validity of the proposed bias circuit.File in questo prodotto:
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