SFERA Archivio dei prodotti della Ricerca dell'Università di Ferrara

GROSSI, Alessandro
 Distribuzione geografica
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Continente #
NA - Nord America 2.294
EU - Europa 898
AS - Asia 606
AF - Africa 21
SA - Sud America 11
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 2
Totale 3.837
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Nazione #
US - Stati Uniti d'America 2.239
CN - Cina 276
IT - Italia 177
DE - Germania 168
GB - Regno Unito 97
KR - Corea 92
FR - Francia 90
NL - Olanda 80
TW - Taiwan 63
CA - Canada 50
IN - India 50
RU - Federazione Russa 50
BE - Belgio 37
IE - Irlanda 35
VN - Vietnam 32
SG - Singapore 31
JP - Giappone 26
PL - Polonia 24
GR - Grecia 22
FI - Finlandia 21
CZ - Repubblica Ceca 18
SE - Svezia 18
ZA - Sudafrica 18
HK - Hong Kong 17
UA - Ucraina 15
ES - Italia 14
CH - Svizzera 8
BG - Bulgaria 6
LT - Lituania 6
AU - Australia 5
IR - Iran 5
RO - Romania 5
BR - Brasile 4
IL - Israele 4
MX - Messico 4
AT - Austria 3
CL - Cile 3
EC - Ecuador 3
SA - Arabia Saudita 3
BD - Bangladesh 2
EU - Europa 2
PS - Palestinian Territory 2
AR - Argentina 1
BT - Bhutan 1
ET - Etiopia 1
HN - Honduras 1
HR - Croazia 1
KE - Kenya 1
LB - Libano 1
MY - Malesia 1
NO - Norvegia 1
PT - Portogallo 1
SK - Slovacchia (Repubblica Slovacca) 1
ZM - Zambia 1
Totale 3.837
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Città #
Houston 363
Fairfield 193
Ann Arbor 186
Santa Cruz 161
Buffalo 118
Ashburn 114
Seattle 103
Wilmington 76
Woodbridge 73
Cambridge 72
Beijing 67
Settimo Milanese 45
Ferrara 44
Taipei 41
Des Moines 39
Shanghai 36
San Diego 35
Wuhan 35
Dublin 34
Hangzhou 32
Norwalk 28
Bengaluru 27
Munich 27
Suwon 27
Dong Ket 26
Warsaw 24
Chicago 22
Boardman 21
Mcallen 21
Las Vegas 20
Singapore 19
Tilburg 19
Delft 18
Montréal 17
Toronto 16
Lake Forest 15
Muizenberg 15
Stockholm 15
Saint Petersburg 14
Frankfurt An Der Oder 13
Helsinki 13
Aachen 12
Clearwater 12
Guangzhou 11
Los Angeles 11
Milan 11
New York 11
Phoenix 11
Riva 11
Columbus 10
Dallas 10
Ixelles-Elsene 10
Ottawa 10
Frankfurt (Oder) 9
Hefei 9
Kraainem 9
Moscow 9
Rotterdam 9
San Jose 9
Seoul 9
University Park 9
Boulder 8
Brussels 8
Redmond 8
Scranton 8
St Petersburg 8
Council Bluffs 7
Dresden 7
Passau 7
Salt Lake City 7
Austin 6
Duncan 6
Falls Church 6
Leuven 6
Paris 6
Tokyo 6
Zurich 6
Banpobondong 5
Henderson 5
Ho Chi Minh City 5
Kiel 5
Palo Alto 5
Providence 5
San Francisco 5
Shenzhen 5
Sofia 5
Southend 5
Tainan City 5
Vicenza 5
Yuseong-gu 5
Bangalore 4
Central 4
Den Haag 4
Erlangen 4
Flensburg 4
Heverlee 4
Hsinchu 4
London 4
Menlo Park 4
Mexico 4
Totale 2.701
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Nome #
Reduction of the Cell-to-Cell Variability in Hf1-xAlxOy Based RRAM Arrays by Using Program Algorithms, file e309ade1-c8ea-3969-e053-3a05fe0a2c94 343
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays, file e309ade1-c8ee-3969-e053-3a05fe0a2c94 339
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2, file e309ade1-c8e8-3969-e053-3a05fe0a2c94 268
Experimental Investigation of 4-kb RRAM Arrays Programming Conditions Suitable for TCAM, file e309ade2-00f5-3969-e053-3a05fe0a2c94 267
RRAM Reliability/Performance Characterization through Array Architectures Investigations, file e309ade1-c1d0-3969-e053-3a05fe0a2c94 257
Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2, file e309ade1-c8f3-3969-e053-3a05fe0a2c94 254
Radiation hard design of HfO2 based 1T1R cells and memory arrays, file e309ade1-c23e-3969-e053-3a05fe0a2c94 243
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices, file e309ade1-c882-3969-e053-3a05fe0a2c94 241
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays, file e309ade1-c22a-3969-e053-3a05fe0a2c94 224
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays, file e309ade2-eea8-3969-e053-3a05fe0a2c94 204
Automated characterization of TAS-MRAM test arrays, file e309ade1-c1d2-3969-e053-3a05fe0a2c94 201
Reliability and Cell-to-Cell Variability of TAS-MRAM arrays under cycling conditions, file e309ade1-c237-3969-e053-3a05fe0a2c94 195
Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays, file e309ade1-c1cc-3969-e053-3a05fe0a2c94 186
An automated test equipment for characterization of emerging MRAM and RRAM arrays, file e309ade1-d47b-3969-e053-3a05fe0a2c94 160
Resistive RAM endurance: Array-level characterization and correction techniques targeting deep learning applications, file e309ade2-240f-3969-e053-3a05fe0a2c94 150
Assessing the forming temperature role on amorphous and polycrystalline HfO2-based 4 kbit RRAM arrays performance, file e309ade1-bdf0-3969-e053-3a05fe0a2c94 138
Quality of Service implications of Enhanced Program Algorithms for Charge Trapping NAND in future Solid State Drives, file e309ade0-829e-3969-e053-3a05fe0a2c94 126
Cell-to-cell Fundamental Variability Limits Investigation in OxRRAM arrays, file e309ade1-8529-3969-e053-3a05fe0a2c94 67
Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices, file e309ade1-e33f-3969-e053-3a05fe0a2c94 49
Impact of the Incremental Programming Algorithm on the Filament Conduction in HfO2-Based RRAM Arrays, file e309ade1-41fa-3969-e053-3a05fe0a2c94 47
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays, file e309ade3-7c51-3969-e053-3a05fe0a2c94 33
Emerging non volatile memories reliability, file e309ade5-9ac2-3969-e053-3a05fe0a2c94 6
Reliability of 3D NAND Flash Memories, file e309ade0-ce30-3969-e053-3a05fe0a2c94 2
null, file e309ade0-d455-3969-e053-3a05fe0a2c94 2
Fundamental variability limits of filament-based RRAM, file e309ade1-4441-3969-e053-3a05fe0a2c94 2
Statistical analysis of resistive switching characteristics in ReRAM test arrays, file e309ade0-801d-3969-e053-3a05fe0a2c94 1
Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing, file e309ade2-376a-3969-e053-3a05fe0a2c94 1
Mechanism of the Key Impact of Residual Carbon Content on the Reliability of Integrated Resistive Random Access Memory Arrays, file e309ade3-0028-3969-e053-3a05fe0a2c94 1
Totale 4.007
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Categoria #
all - tutte 8.954
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2
Totale 8.956
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019104 0 0 0 0 0 0 0 0 0 0 51 53
2019/2020505 56 45 35 82 54 46 36 27 43 20 34 27
2020/2021693 28 45 38 28 59 42 45 72 33 135 85 83
2021/20221.270 91 46 72 321 206 54 86 40 53 50 185 66
2022/2023673 25 61 175 80 27 73 62 15 20 32 60 43
2023/2024476 33 40 47 47 65 54 23 56 50 53 8 0
Totale 4.007