A recently proposed, technology-independent model is adopted for small- and large-signal performance prediction of PHEMT devices. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages, and can be easily identified from conventional DC and small-signal differential parameter measurements, without involving nonlinear optimization procedures. Experimental results for a GaAs PHEMT confirming the model accuracy at high operating frequencies are provided in the paper and compared with the prediction capability of two different models: the behavioral Nonlinear Discrete Convolution model and the equivalent-circuit based TriQuint’s Own Model provided by the foundry.

Accurate small- and large-signal predictions using a simple, non-quasi-static, empirical model

DI GIACOMO, Valeria;RAFFO, Antonio;VANNINI, Giorgio;
2006

Abstract

A recently proposed, technology-independent model is adopted for small- and large-signal performance prediction of PHEMT devices. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages, and can be easily identified from conventional DC and small-signal differential parameter measurements, without involving nonlinear optimization procedures. Experimental results for a GaAs PHEMT confirming the model accuracy at high operating frequencies are provided in the paper and compared with the prediction capability of two different models: the behavioral Nonlinear Discrete Convolution model and the equivalent-circuit based TriQuint’s Own Model provided by the foundry.
2006
9783902477071
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/524257
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