Accurate small- and large-signal predictions using a simple, non-quasi-static, empirical model

A recently proposed, technology-independent model is adopted for small- and large-signal performance prediction of PHEMT devices. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages, and can be easily identified from conventional DC and small-signal differential parameter measurements, without involving nonlinear optimization procedures. Experimental results for a GaAs PHEMT confirming the model accuracy at high operating frequencies are provided in the paper and compared with the prediction capability of two different models: the behavioral Nonlinear Discrete Convolution model and the equivalent-circuit based TriQuint’s Own Model provided by the foundry.