A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate predictions at microwave and millimetre waves is proposed in this paper. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages. In particular, in the paper it is shown how to define and experimentally identify suitable voltage-controlled voltage sources, which modify the original domain of applied voltages and create a suitable control environment for the purely-quasi-static associated device. The advantage of this approach is that conventional purely quasi-static models can still be adopted even at very high frequencies, if suitable equivalent voltages are applied. Preliminary experimental validation of the approach is provided in the paper by means of a GaAs PHEMT.

A simple non-quasi-static non-linear model of electron devices

RAFFO, Antonio;VANNINI, Giorgio;
2005

Abstract

A technology-independent, non-quasi-static non-linear model of electron devices capable of accurate predictions at microwave and millimetre waves is proposed in this paper. The model is based on the definition of a quasi-static associated device, which is controlled by means of equivalent voltages. In particular, in the paper it is shown how to define and experimentally identify suitable voltage-controlled voltage sources, which modify the original domain of applied voltages and create a suitable control environment for the purely-quasi-static associated device. The advantage of this approach is that conventional purely quasi-static models can still be adopted even at very high frequencies, if suitable equivalent voltages are applied. Preliminary experimental validation of the approach is provided in the paper by means of a GaAs PHEMT.
2005
9788890201202
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/517236
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