This Special Issue reviews the state-of-the-art and new trends in modeling of Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all receive significant attention, highlighting the potential of this disruptive technology in the development of future communication systems.

Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits

RAFFO, Antonio
2017

Abstract

This Special Issue reviews the state-of-the-art and new trends in modeling of Gallium Nitride transistors. Aspects of transistor characterization, simulation, and design all receive significant attention, highlighting the potential of this disruptive technology in the development of future communication systems.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2355309
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