A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analytically through full-wave electromagnetic simulations and a scalable black-box representation of the intrinsic noise and AC response of the device. The analytical extraction of the lumped parasitic network is extensively explained, as well as the intrinsic model identification. The model prediction capability, in terms of S-parameters and noise performance, has been validated through the scaling of two different HEMTs. © 2014 European Microwave Association.

A scalable HEMT noise model based on FW-EM analyses

NALLI, Andrea;RAFFO, Antonio;VANNINI, Giorgio;
2014

Abstract

A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analytically through full-wave electromagnetic simulations and a scalable black-box representation of the intrinsic noise and AC response of the device. The analytical extraction of the lumped parasitic network is extensively explained, as well as the intrinsic model identification. The model prediction capability, in terms of S-parameters and noise performance, has been validated through the scaling of two different HEMTs. © 2014 European Microwave Association.
2014
9782874870354
low-noise amplifiers; Semiconductor device modeling; semiconductor device noise; Electrical and Electronic Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2336343
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