This work presents a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data required for the proposed modelling strategy consist of a small set of lowfrequency time-domain waveform measurements. Numerical optimization is adopted to identify the model parameters. The validity of the proposed method is verified by its application to a silicon FinFET. Very good agreement between model predictions and nonlinear measurements is demonstrated.
Time-domain Waveform based Extraction of FinFET Nonlinear I-V Model
RAFFO, Antonio;VANNINI, Giorgio;
2012
Abstract
This work presents a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data required for the proposed modelling strategy consist of a small set of lowfrequency time-domain waveform measurements. Numerical optimization is adopted to identify the model parameters. The validity of the proposed method is verified by its application to a silicon FinFET. Very good agreement between model predictions and nonlinear measurements is demonstrated.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.