This work presents a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data required for the proposed modelling strategy consist of a small set of lowfrequency time-domain waveform measurements. Numerical optimization is adopted to identify the model parameters. The validity of the proposed method is verified by its application to a silicon FinFET. Very good agreement between model predictions and nonlinear measurements is demonstrated.

Time-domain Waveform based Extraction of FinFET Nonlinear I-V Model

RAFFO, Antonio;VANNINI, Giorgio;
2012

Abstract

This work presents a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors. Since the main cause of the transistor nonlinearity can be attributed to the drain-source current generator, its correct modeling is fundamental for predicting accurately the device behaviour under realistic operating conditions, namely large-signal operation. The experimental data required for the proposed modelling strategy consist of a small set of lowfrequency time-domain waveform measurements. Numerical optimization is adopted to identify the model parameters. The validity of the proposed method is verified by its application to a silicon FinFET. Very good agreement between model predictions and nonlinear measurements is demonstrated.
2012
9788362954438
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1732448
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