A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.

High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology

RAFFO, Antonio;VANNINI, Giorgio;
2011

Abstract

A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.
G., Crupi; D., Schreurs; A., Caddemi; Raffo, Antonio; F., Vanaverbeke; G., Avolio; Vannini, Giorgio; W., De Raedt
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1545798
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