A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
Data di pubblicazione: | 2011 | |
Titolo: | High-Frequency Extraction of the Extrinsic Capacitances for GaN HEMT Technology | |
Autori: | G.Crupi; D.Schreurs; A.Caddemi; A.Raffo; F.Vanaverbeke; G.Avolio; G.Vannini; W.De Raedt | |
Rivista: | IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | |
Abstract: | A novel extraction methodology is proposed to distinguish between the extrinsic and intrinsic capacitances of wide GaN HEMTs. This approach is based on the experimental observation that the real parts of the impedance parameters of such devices increase at high-frequency. The mathematical analysis clearly shows that this so far uninvestigated behavior can be attributed to the extrinsic capacitances. | |
Digital Object Identifier (DOI): | 10.1109/LMWC.2011.2160525 | |
Handle: | http://hdl.handle.net/11392/1545798 | |
Appare nelle tipologie: | 03.1 Articolo su rivista |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.