SiC-based electroconductive composites containing 10 and 30 vol% MoSi2 particles were hot pressed at 1900°C. The MoSi2 particles, besides increasing the electrical conductivity of the silicon carbide matrix, acted as reinforcement for the material. For the composition containing 30 vol% of MoSi2 (see figure), the room-temperature strength was 825 MPa, the fracture toughness 4.8 MPa·m0.5 and the electrical resistivity 1.3·10-3 Ohm·cm.
High strength and toughness electroconductive SiC-based composites
BALBO, Andrea;
2006
Abstract
SiC-based electroconductive composites containing 10 and 30 vol% MoSi2 particles were hot pressed at 1900°C. The MoSi2 particles, besides increasing the electrical conductivity of the silicon carbide matrix, acted as reinforcement for the material. For the composition containing 30 vol% of MoSi2 (see figure), the room-temperature strength was 825 MPa, the fracture toughness 4.8 MPa·m0.5 and the electrical resistivity 1.3·10-3 Ohm·cm.File in questo prodotto:
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Sciti-D._High-strength-and-toughness-electroconductive-SiC-based-composites_Adv.-Eng.-Mater._2006_8_10_997_1001.pdf
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