The widely accepted expression for conductance in polycrystalline metal oxides cannot take into account of the observed decrease in conductance of nanostructured materials with respect to their larger counterpart. We provide here an explanation for this phenomenon suggesting that tunneling through the Schottky barrier has a comparable importance to thermionic crossing in ruling the electron transport in these materials.

Unpinning of the Fermi level and tunneling in metal oxide semiconductors

MALAGU', Cesare;MARTINELLI, Giuliano;
2008

Abstract

The widely accepted expression for conductance in polycrystalline metal oxides cannot take into account of the observed decrease in conductance of nanostructured materials with respect to their larger counterpart. We provide here an explanation for this phenomenon suggesting that tunneling through the Schottky barrier has a comparable importance to thermionic crossing in ruling the electron transport in these materials.
2008
Malagu', Cesare; Martinelli, Giuliano; M. A., Ponce; C. M., Aldao
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/527305
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