A deep knowledge of the features and evolution of the nitride storage charge is crucial for reliability, future scalability, and multi-level operation. The purpose of this paper is twofold: 1) to show a combined simulative-experimental technique allowing profiling hole distribution; 2) to monitor through this technique the nitride charge evolution. Interesting correlation will be found between the lateral field in the nitride and the degradation of memory retention after cycling.

Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention

PADOVANI, Andrea;
2007

Abstract

A deep knowledge of the features and evolution of the nitride storage charge is crucial for reliability, future scalability, and multi-level operation. The purpose of this paper is twofold: 1) to show a combined simulative-experimental technique allowing profiling hole distribution; 2) to monitor through this technique the nitride charge evolution. Interesting correlation will be found between the lateral field in the nitride and the degradation of memory retention after cycling.
2007
NROM; nitride-based trapping storage; device simulations; Flash memory; semiconductor device reliability; trapped charge profiling
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/521785
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact