A deep knowledge of the features and evolution of the nitride storage charge is crucial for reliability, future scalability, and multi-level operation. The purpose of this paper is twofold: 1) to show a combined simulative-experimental technique allowing profiling hole distribution; 2) to monitor through this technique the nitride charge evolution. Interesting correlation will be found between the lateral field in the nitride and the degradation of memory retention after cycling.
Hole Distributions in NROM Devices: Profiling Technique and Correlation to Memory Retention
PADOVANI, Andrea;
2007
Abstract
A deep knowledge of the features and evolution of the nitride storage charge is crucial for reliability, future scalability, and multi-level operation. The purpose of this paper is twofold: 1) to show a combined simulative-experimental technique allowing profiling hole distribution; 2) to monitor through this technique the nitride charge evolution. Interesting correlation will be found between the lateral field in the nitride and the degradation of memory retention after cycling.File in questo prodotto:
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