We investigated the electrical properties of a thin film device composed of a superconducting Nb channel (5 μm wide) and a ferromagnetic superimposed structure (a square Ni80Fe20 dot of 20 μm in size) which is magnetized by a small external magnetic field. A hysteretic dependence of the critical current of the superconducting channel on the applied field is observed. This behavior is attributed to the stray field generated by the magnetized ferromagnetic dot. The strength of the effect and the small size make the device attractive as a switching element in modern low-critical-temperature superconducting circuits, all based on Nb technology
Critical current hysteresis in a ferromagnet-superconductor device
VAVASSORI, Paolo
2004
Abstract
We investigated the electrical properties of a thin film device composed of a superconducting Nb channel (5 μm wide) and a ferromagnetic superimposed structure (a square Ni80Fe20 dot of 20 μm in size) which is magnetized by a small external magnetic field. A hysteretic dependence of the critical current of the superconducting channel on the applied field is observed. This behavior is attributed to the stray field generated by the magnetized ferromagnetic dot. The strength of the effect and the small size make the device attractive as a switching element in modern low-critical-temperature superconducting circuits, all based on Nb technologyI documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
