An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.
Experimental study of the response time of GaAs as a photoemitter
CALABRESE, Roberto;CIULLO, Giuseppe;GUIDI, Vincenzo;LENISA, Paolo;
1995
Abstract
An experimental investigation was carried out to measure the response time of GaAs in negative electron affinity conditions as a photoemitter. During the experiment, the photocathode was excited by a short-pulse (38 ps rms) frequency-doubled Nd:YLF laser. Results show that the rms response time of GaAs is shorter than 40 ps.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.