A general purpose mathematical approach is proposed for the large-signal modelling of microwave electron devices (e.g. MESFETs, bipolar transistors, diodes, etc.). The mathematical model, which is based on mild assumptions valid both for field effect and bipolar devices in typical large-signal operating conditions, can easily be identified through conventional measurements and is particularly suitable for nonlinear microwave circuit analysis based on harmonic balance techniques.

Mathematical approach to large-signal modelling of electron devices

Vannini G.
1991

Abstract

A general purpose mathematical approach is proposed for the large-signal modelling of microwave electron devices (e.g. MESFETs, bipolar transistors, diodes, etc.). The mathematical model, which is based on mild assumptions valid both for field effect and bipolar devices in typical large-signal operating conditions, can easily be identified through conventional measurements and is particularly suitable for nonlinear microwave circuit analysis based on harmonic balance techniques.
1991
Filicori, F.; Vannini, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/463431
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