Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE

Advanced Electrical-Level Modeling of EEPROM Cells

OLIVO, Piero;
1993

Abstract

Conventional modeling of floating-gate EEPROM cells is shown to be inadequate to correctly evaluate the tunnel current flowing through the MOS injector during programming, essentially because of relevant quantum phenomena taking place at the cathode semiconductor-oxide interface. An electrical-level model is developed and discussed incorporating numerical analysis of such effects. The model is validated by comparing results of the simulations with experimental data obtained with EEPROM cells. The model of the MOS injector has been implemented in the circuit simulator SPICE. © 1993 IEEE
1993
M., Lanzoni; J., Sune'; Olivo, Piero; B., Ricco'
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/462059
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