Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.
Evidence of the Role of Defects Near the Injecting Interface in Determining SiO2 Breakdown
OLIVO, Piero;
1987
Abstract
Experimental results on oxide breakdown in thin insulator metal-oxide-semiconductor structures are presented to show that at a microscopic level breakdown is related to defects located near the injecting interface. In addition, breakdown is found to be almost independent of electron fluence.File in questo prodotto:
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