In this work, we investigate the effects of nondisruptive high-field stress on the tunneling characteristics of thin SiO2 films (<100 Å) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.
High-Field-Induced Voltage-Dependent Oxide-Charge
Olivo P.;Sangiorgi E.
1986
Abstract
In this work, we investigate the effects of nondisruptive high-field stress on the tunneling characteristics of thin SiO2 films (<100 Å) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where electrons tunnel in and out of trap states located near the injecting interface. Consequently, the trap occupation, hence oxide charge, is determined by transmission coefficients that strongly depend on the actual oxide potential.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
