The role of quantum effects, strongly modifying the physics of SiSiO2 interfaces in accumulated thin-oxide MOS structures, is reviewed and discussed. The main differences with respect to the classical case are analysed: in particular, it is shown that the semiconductor voltage drop and the oxide barrier height for Fowler-Nordheim tunnel injection are largely modified by the quantization of the accumulation layers. The dependence of the barrier height on the oxide field has a remarkable impact on the modelling of thin oxides: in particular, the Fowler-Nordheim current is shown to be correctly estimated only if quantum effects are correctly taken into account. © 1994.
Quantum effects in accumulated MOS thin dielectric structures
OLIVO, Piero;
1994
Abstract
The role of quantum effects, strongly modifying the physics of SiSiO2 interfaces in accumulated thin-oxide MOS structures, is reviewed and discussed. The main differences with respect to the classical case are analysed: in particular, it is shown that the semiconductor voltage drop and the oxide barrier height for Fowler-Nordheim tunnel injection are largely modified by the quantization of the accumulation layers. The dependence of the barrier height on the oxide field has a remarkable impact on the modelling of thin oxides: in particular, the Fowler-Nordheim current is shown to be correctly estimated only if quantum effects are correctly taken into account. © 1994.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
