We have measured the Brillouin spectrum in p-p polarization of a bilayer of Si/SiO2 produced by low-dose oxygen implantation on the Si (001) surface. The spectra show two strong resonances close to the longitudinal threshold of silicon, which are explained by a full calculation of the Brillouin cross section. In particular the resonance below the threshold is a guided mode of the buried layer (SiO2), which originates from the localization in the layer of the surface longitudinal resonance of the matrix (Si). The theory takes into account in a supported double layer both the ripple and the elasto-optic scattering mechanisms. © 1994 The American Physical Society.
Localization of the surface acoustic longitudinal pseudomode of silicon in a buried SiO2 layer
NIZZOLI, Fabrizio;GIOVANNINI, Loris;
1994
Abstract
We have measured the Brillouin spectrum in p-p polarization of a bilayer of Si/SiO2 produced by low-dose oxygen implantation on the Si (001) surface. The spectra show two strong resonances close to the longitudinal threshold of silicon, which are explained by a full calculation of the Brillouin cross section. In particular the resonance below the threshold is a guided mode of the buried layer (SiO2), which originates from the localization in the layer of the surface longitudinal resonance of the matrix (Si). The theory takes into account in a supported double layer both the ripple and the elasto-optic scattering mechanisms. © 1994 The American Physical Society.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
