We used a GaAs crystal operating in a negative electron affinity mode to produce an intense continuous electron beam by photoemission. The major drawback of photoemission from GaAs, i.e., rapid current decay, was overcome without continuously supplying cesium. After a little initial decay, the current remained constant at 1 mA over a few mm2, with no degradation. Seasoning of the vacuum chamber played a fundamental role in achieving this performance.
Long-lifetime high-intensity GaAs photosource
CALABRESE, Roberto;CIULLO, Giuseppe;GUIDI, Vincenzo;LENISA, Paolo;
1994
Abstract
We used a GaAs crystal operating in a negative electron affinity mode to produce an intense continuous electron beam by photoemission. The major drawback of photoemission from GaAs, i.e., rapid current decay, was overcome without continuously supplying cesium. After a little initial decay, the current remained constant at 1 mA over a few mm2, with no degradation. Seasoning of the vacuum chamber played a fundamental role in achieving this performance.File in questo prodotto:
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