Non-magnetic oxide/Co-based heterostructures with perpendicular magnetic anisotropy (PMA) are highly attractive for energy-efficient spintronic applications, owing to the tunability of their magnetic properties via external electric fields. SrTiO3 (STO)/Co systems, in particular, offer strong potential due to the high dielectric constant of STO, which enables efficient voltage control of interfacial magnetism by interface charge accumulation. Although PMA has been previously observed, its microscopic origin remains unclear. Here, we investigate the mechanism responsible for PMA in Co/X (X = Pd, Pt) thin films on STO(1 1 1) and STO(1 0 0) substrates with mixed terminations. The results indicate a strong influence of STO orientation, reflected in different surface reactivity, as well as of the nature of the capping layer. These findings shed light on the interfacial factors that control PMA in STO/Co/X (X = Pd, Pt) heterostructures, suggesting that optimal PMA can be achieved by employing STO(1 1 1) substrates with a pure SrO34- termination, thereby enabling the development of advanced energy-efficient spintronic devices.
On the origin of perpendicular magnetic anisotropy in STO/Co/X (X = Pd, Pt) sputtered films
Spizzo, Federico;Del Bianco, Lucia;
2026
Abstract
Non-magnetic oxide/Co-based heterostructures with perpendicular magnetic anisotropy (PMA) are highly attractive for energy-efficient spintronic applications, owing to the tunability of their magnetic properties via external electric fields. SrTiO3 (STO)/Co systems, in particular, offer strong potential due to the high dielectric constant of STO, which enables efficient voltage control of interfacial magnetism by interface charge accumulation. Although PMA has been previously observed, its microscopic origin remains unclear. Here, we investigate the mechanism responsible for PMA in Co/X (X = Pd, Pt) thin films on STO(1 1 1) and STO(1 0 0) substrates with mixed terminations. The results indicate a strong influence of STO orientation, reflected in different surface reactivity, as well as of the nature of the capping layer. These findings shed light on the interfacial factors that control PMA in STO/Co/X (X = Pd, Pt) heterostructures, suggesting that optimal PMA can be achieved by employing STO(1 1 1) substrates with a pure SrO34- termination, thereby enabling the development of advanced energy-efficient spintronic devices.| File | Dimensione | Formato | |
|---|---|---|---|
|
APS 730 (2026) 166261.pdf
solo gestori archivio
Descrizione: Full text editoriale
Tipologia:
Full text (versione editoriale)
Licenza:
Copyright dell'editore
Dimensione
4.99 MB
Formato
Adobe PDF
|
4.99 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


