The 3D NAND Flash memory technology is the main building block of storage architectures such as multimedia cards and Solid-State Drives. Applications ranging from mobile to high-performance computing are continuously calling for an increased storage density, requiring massive scaling efforts at the device and array level. This leads to a natural degradation of the functional metrics of the technology while exposing new reliability issues that jeopardize the inherent memory trade-off with performance. A simple device optimization would be insufficient to tackle the problem. In this work, we show through some case studies how a cross-layer approach spanning from devices and circuits to system-level optimizations is mandatory for future storage systems development.

Improving 3D NAND Flash Memories Reliability: a Cross-Layer Perspective

Zambelli C.
Primo
;
Micheloni R.
Ultimo
2024

Abstract

The 3D NAND Flash memory technology is the main building block of storage architectures such as multimedia cards and Solid-State Drives. Applications ranging from mobile to high-performance computing are continuously calling for an increased storage density, requiring massive scaling efforts at the device and array level. This leads to a natural degradation of the functional metrics of the technology while exposing new reliability issues that jeopardize the inherent memory trade-off with performance. A simple device optimization would be insufficient to tackle the problem. In this work, we show through some case studies how a cross-layer approach spanning from devices and circuits to system-level optimizations is mandatory for future storage systems development.
2024
9798350360608
3D NAND Flash; ECC; randomization; reliability; Solid-State Drives (SSD); temporary read errors
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2569649
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