The 3D NAND Flash memory technology is the main building block of storage architectures such as multimedia cards and Solid-State Drives. Applications ranging from mobile to high-performance computing are continuously calling for an increased storage density, requiring massive scaling efforts at the device and array level. This leads to a natural degradation of the functional metrics of the technology while exposing new reliability issues that jeopardize the inherent memory trade-off with performance. A simple device optimization would be insufficient to tackle the problem. In this work, we show through some case studies how a cross-layer approach spanning from devices and circuits to system-level optimizations is mandatory for future storage systems development.
Improving 3D NAND Flash Memories Reliability: a Cross-Layer Perspective
Zambelli C.
Primo
;Micheloni R.Ultimo
2024
Abstract
The 3D NAND Flash memory technology is the main building block of storage architectures such as multimedia cards and Solid-State Drives. Applications ranging from mobile to high-performance computing are continuously calling for an increased storage density, requiring massive scaling efforts at the device and array level. This leads to a natural degradation of the functional metrics of the technology while exposing new reliability issues that jeopardize the inherent memory trade-off with performance. A simple device optimization would be insufficient to tackle the problem. In this work, we show through some case studies how a cross-layer approach spanning from devices and circuits to system-level optimizations is mandatory for future storage systems development.File | Dimensione | Formato | |
---|---|---|---|
Zambelli_IPFA2024_invited_IRIS.pdf
solo gestori archivio
Tipologia:
Full text (versione editoriale)
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
1.01 MB
Formato
Adobe PDF
|
1.01 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.