We propose a device architecture termed gate-array electrolyte gated organic transistor (GA-EGOFET) that quantitatively measures the solute concentration gradient created in a spatially inhomogeneous solution, for instance a (biological) fluid. The integrated H-cell microfluidics yields a diffusive concentration profile along the microfluidics channel according to the flow rate of the input streams. We demonstrate this concept by monitoring the formation of self-assembly monolayers (SAMs) on top of an array of parallel Au gate electrodes exposed to a different local concentration of alkanethiols. The deposition rate and the coverage both increase from the entrance towards the H-cell end. The voltage change at each gate is transduced in the transfer curve acquired with the specific gate electrode. For short chain length SAMs (n = 3), the trend of the current hints to a diffusion-limited surface reaction. For longer thiols (n = 6, 9), instead, the slower surface diffusion or incorporation in the more stable and compact SAM yields a current that is independent of the longitudinal gradient. The microfluidics/GA-EGOFET platform is viable for constructing dose curves in reproducible manner and for validating different electrode functionalization strategies where the deposition rates are different at each substrate site.
Concentration gradients probed in microfluidics by gate-array electrolyte organic transistor
Greco, Pierpaolo
Secondo
;Bianchi, Michele;Fadiga, LucianoPenultimo
;Biscarini, FabioUltimo
2024
Abstract
We propose a device architecture termed gate-array electrolyte gated organic transistor (GA-EGOFET) that quantitatively measures the solute concentration gradient created in a spatially inhomogeneous solution, for instance a (biological) fluid. The integrated H-cell microfluidics yields a diffusive concentration profile along the microfluidics channel according to the flow rate of the input streams. We demonstrate this concept by monitoring the formation of self-assembly monolayers (SAMs) on top of an array of parallel Au gate electrodes exposed to a different local concentration of alkanethiols. The deposition rate and the coverage both increase from the entrance towards the H-cell end. The voltage change at each gate is transduced in the transfer curve acquired with the specific gate electrode. For short chain length SAMs (n = 3), the trend of the current hints to a diffusion-limited surface reaction. For longer thiols (n = 6, 9), instead, the slower surface diffusion or incorporation in the more stable and compact SAM yields a current that is independent of the longitudinal gradient. The microfluidics/GA-EGOFET platform is viable for constructing dose curves in reproducible manner and for validating different electrode functionalization strategies where the deposition rates are different at each substrate site.File | Dimensione | Formato | |
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