The purpose is to analyze the strain of graphene on copper and after transfer on silicon substrates, evaluating the effect of different transfer methodologies, using NEXAFS spectroscopy combined with RSXRR. Measurements will be performed also on hybrid graphene diodes trying to correlate the strain in graphene film to diode’s electrical performances.
NEXAFS spectroscopy for the study of structural defects in transferred graphene and related effects on electrical performances of hybrid graphene devices
D. Bisero;P. Maccagnani
2022
Abstract
The purpose is to analyze the strain of graphene on copper and after transfer on silicon substrates, evaluating the effect of different transfer methodologies, using NEXAFS spectroscopy combined with RSXRR. Measurements will be performed also on hybrid graphene diodes trying to correlate the strain in graphene film to diode’s electrical performances.File in questo prodotto:
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