Despite advantages highlighted by MOX-based gas sensors, these devices still show drawbacks in their performances (e.g. selectivity and stability), so further investigations are necessary. SnO2 is the most used semiconductor for chemoresistive gas sensors production due to its broad spectrum of physical-chemical properties, and then it represents the best candidate for the innovative work here proposed. Indeed, among the gaps in research on this material, it is placed the study of oxygen deficiency and its impact on the tin dioxide physicochemical properties. A series of first-principles study was carried out in order to study the impact of oxygen vacancies on the physical-chemical properties of SnO2. The results showed a high electrical conductivity for the samples with oxygen vacancies, which can give a decrease of the operating temperature that sensing material needs to be thermo-activated. The arrangement of the impurity states is one of the important parameters that involve the reactions on the material surface, making the excitation of weakly bound valence electrons into the unoccupied energy levels in the conduction bands.

Influence of Oxygen Vacancies in Gas Sensors Based on Metal-Oxide Semiconductors: A First-Principles Study

Soufiane Krik
Primo
;
Andrea Gaiardo
Secondo
;
Matteo Valt;Barbara Fabbri;Cesare Malagù;Davide Casotti;Giuseppe Cruciani;Vincenzo Guidi
Penultimo
;
2020

Abstract

Despite advantages highlighted by MOX-based gas sensors, these devices still show drawbacks in their performances (e.g. selectivity and stability), so further investigations are necessary. SnO2 is the most used semiconductor for chemoresistive gas sensors production due to its broad spectrum of physical-chemical properties, and then it represents the best candidate for the innovative work here proposed. Indeed, among the gaps in research on this material, it is placed the study of oxygen deficiency and its impact on the tin dioxide physicochemical properties. A series of first-principles study was carried out in order to study the impact of oxygen vacancies on the physical-chemical properties of SnO2. The results showed a high electrical conductivity for the samples with oxygen vacancies, which can give a decrease of the operating temperature that sensing material needs to be thermo-activated. The arrangement of the impurity states is one of the important parameters that involve the reactions on the material surface, making the excitation of weakly bound valence electrons into the unoccupied energy levels in the conduction bands.
978-3-030-37558-4
978-3-030-37558-4
Oxygen vacancies; SnO2; Gas sensor; DFT
File in questo prodotto:
File Dimensione Formato  
Soufiane Krik_compressed (1).pdf

solo gestori archivio

Descrizione: Volume integrale
Tipologia: Full text (versione editoriale)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 8.6 MB
Formato Adobe PDF
8.6 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
Soufiane Krik_compressed (1) (1).pdf

solo gestori archivio

Descrizione: Full text editoriale
Tipologia: Full text (versione editoriale)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 383.32 kB
Formato Adobe PDF
383.32 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11392/2421806
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 1
social impact