We present a quantitative experimental analysis of the radiation emission of 12.6 GeV electrons moving along and across the (111) planes of a strongly bent silicon crystal with a bending radius of 0.15 m. We have measured the radiation emitted during volume reflection, which has shown to strongly enhance the emission of low-energy photons, and a convincing agreement between simulations and experimental data is found.
Photon emission by volume reflected electrons in bent crystals
E. Bagli;L. Bandiera;V. Guidi;A. Mazzolari;
2019
Abstract
We present a quantitative experimental analysis of the radiation emission of 12.6 GeV electrons moving along and across the (111) planes of a strongly bent silicon crystal with a bending radius of 0.15 m. We have measured the radiation emitted during volume reflection, which has shown to strongly enhance the emission of low-energy photons, and a convincing agreement between simulations and experimental data is found.File in questo prodotto:
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