The ordered positions of atoms in crystals give a reason to study multiple Coulomb scattering of high energy charged particles within them. In addition, the accurate representation of multiple scattering of high energy protons in a bent crystal is important for studies of crystal assisted collimation at the SPS and the LHC. Multiple scattering of 400Â GeV/c protons in bent silicon crystals was measured for orientations far from the directions of main crystallographic planes and axes in conditions excluding channeling of protons. The observed RMS widths of the angular distributions are a little larger than those obtained from the Moliere theory. Simulation of multiple scattering in a model of binary collisions with the crystal atoms shows about 3.5% decrease of the RMS deflection with respect to the model of a sequence of random collisions. We consider this as a possible indication of a reduction of multiple scattering of protons in a crystal in comparison with its amorphous state.
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|Titolo:||Measurements of multiple scattering of high energy protons in bent silicon crystals|
|Data di pubblicazione:||2017|
|Appare nelle tipologie:||03.1 Articolo su rivista|