The LAUE project, supported by the Italian Space Agency (ASI), is devoted to the development of a long focal length (even 20 m or longer) Laue lens for gamma ray astronomy between 80 and 600 keV. These lenses take advantage of Bragg diffraction to focus radiation onto a small spot drastically improving the signal to noise ratio as well as reducing the required size of the detector significantly. In this paper we present a Monte-Carlo simulation study with MEGALIB to optimize, for space applications, the detector size to achieve high detection efficiency, and to optimize the position resolution of the detector to reconstruct the Point Spread Function of the lens considered for the LAUE project. Then we will show simulations, using the SILVACO semiconductor simulation toolkit, on the optimized detector to estimate its capacitance per channel and depletion voltage. In all of the simulations, two materials were compared; a low density material (Silicon) and a high density material (Germanium).

A simulation study on the focal plane detector of the LAUE project

KHALIL, Mohamad
Primo
;
FRONTERA, Filippo;CAROLI, EZIO;VIRGILLI, Enrico;VALSAN, Vineeth
Ultimo
2015

Abstract

The LAUE project, supported by the Italian Space Agency (ASI), is devoted to the development of a long focal length (even 20 m or longer) Laue lens for gamma ray astronomy between 80 and 600 keV. These lenses take advantage of Bragg diffraction to focus radiation onto a small spot drastically improving the signal to noise ratio as well as reducing the required size of the detector significantly. In this paper we present a Monte-Carlo simulation study with MEGALIB to optimize, for space applications, the detector size to achieve high detection efficiency, and to optimize the position resolution of the detector to reconstruct the Point Spread Function of the lens considered for the LAUE project. Then we will show simulations, using the SILVACO semiconductor simulation toolkit, on the optimized detector to estimate its capacitance per channel and depletion voltage. In all of the simulations, two materials were compared; a low density material (Silicon) and a high density material (Germanium).
2015
Khalil, Mohamad; Frontera, Filippo; Caroli, Ezio; Virgilli, Enrico; Valsan, Vineeth
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2372740
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