We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.
A study of Channeling, Volume Reflection and Volume Capture of 3.35-14.0 GeV Electrons in a bent Silicon Crystal
BAGLI, Enrico;BANDIERA, Laura;GERMOGLI, Giacomo;GUIDI, Vincenzo;MAZZOLARI, Andrea;
2015
Abstract
We present the experimental data and analysis of experiments conducted at SLAC National Accelerator Laboratory investigating the processes of channeling, volume-reflection and volume-capture along the (111) plane in a strongly bent quasi-mosaic silicon crystal. These phenomena were investigated at 5 energies: 3.35, 4.2, 6.3, 10.5 and 14.0 GeV with a crystal with bending radius of 0.15m, corresponding to curvatures of 0.070, 0.088, 0.13, 0.22 and 0.29 times the critical curvature respectively. Based on the parameters of fitting functions we have extracted important parameters describing the channeling process such as the dechanneling length, the angle of volume reflection, the surface transmission and the widths of the distribution of channeled particles parallel and orthogonal to the plane.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
