Several applications of semiconductors depend critically on their doping level; in particular, chemoresistive properties of crystalline metal-oxides strongly depend on the concentration of stoichiometric defects. In the case of SnO2, oxygen vacancies are a case in point of such defects. An important issue is the constant drift of the signal suffered by metal-oxides, ascribed to the in/out diffusion of oxygen vacancies.

Non-oxide semiconductors to reduce oxygen in and out-diffusion: characterizations and applications as gas sensors

MALAGU', Cesare
2015

Abstract

Several applications of semiconductors depend critically on their doping level; in particular, chemoresistive properties of crystalline metal-oxides strongly depend on the concentration of stoichiometric defects. In the case of SnO2, oxygen vacancies are a case in point of such defects. An important issue is the constant drift of the signal suffered by metal-oxides, ascribed to the in/out diffusion of oxygen vacancies.
2015
Chemical Sensors, thick-film technology, metal sulfides
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/2338282
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