Several applications of semiconductors depend critically on their doping level; in particular, chemoresistive properties of crystalline metal-oxides strongly depend on the concentration of stoichiometric defects. In the case of SnO2, oxygen vacancies are a case in point of such defects. An important issue is the constant drift of the signal suffered by metal-oxides, ascribed to the in/out diffusion of oxygen vacancies.
Non-oxide semiconductors to reduce oxygen in and out-diffusion: characterizations and applications as gas sensors
MALAGU', Cesare
2015
Abstract
Several applications of semiconductors depend critically on their doping level; in particular, chemoresistive properties of crystalline metal-oxides strongly depend on the concentration of stoichiometric defects. In the case of SnO2, oxygen vacancies are a case in point of such defects. An important issue is the constant drift of the signal suffered by metal-oxides, ascribed to the in/out diffusion of oxygen vacancies.File in questo prodotto:
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