Simulation of orientational effects in crystals with structural defects through DYNECHARM++

The presence of defects in a crystal modifies the displacement of the atoms and, thereby, the physical processes inside it, e.g., the orientational effects of ultra-relativistic particles. For channeled particles, the probability to undergo dechanneling, i.e., to leave the channeling state, may rise up because of the presence of linear dislocations, while the deflection efficiency for volume reflection is very much the same as for a perfect bent crystal. On the contrary, point defects do not affect the channeling efficiency unless very high volumetric concentration of defects is present. In order to simulate the influence of the defects on channeling and volume reflection, a routine has been specifically developed for the DYNECHARM++ toolkit.