Hybrid III–V semiconductor/silicon three-port filter on 1D-PhC wire

We report on the design of a hybrid III/V semiconductor/silicon three-port channel drop filter at 1,550 nm. The device is excited through a Si photonic wire positioned below the resonant cavity, which is in turn designed by properly drilling holes on a InP 1D-PhC wire. The output signal is collected by a photonic wire waveguide, laterally coupled to the resonator and terminated with a suitable mirror. To raise the drop efficiency above the theoretical limit of 50 % allowed by a design exploiting a single cavity, a different topology based on a two-cavity configuration is then investigated. In this case, a drop efficiency close to 100 % is obtained.