We predict that self-sustained oscillations can be generated in a semiconductor nanocavity in which the dominant effect is band-filling dispersion. Linear stability analysis, validated through numerical integration of a mean-field model, leads us to envisage oscillations typically at tens of gigahertz, with onset at much lower input power (∼ 100 μW) compared with those driven by two-photon absorption.
Low-power spontaneous oscillations driven by band-filling effect
MALAGUTI, Stefania;BELLANCA, Gaetano;TRILLO, Stefano
2013
Abstract
We predict that self-sustained oscillations can be generated in a semiconductor nanocavity in which the dominant effect is band-filling dispersion. Linear stability analysis, validated through numerical integration of a mean-field model, leads us to envisage oscillations typically at tens of gigahertz, with onset at much lower input power (∼ 100 μW) compared with those driven by two-photon absorption.File in questo prodotto:
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