In this letter the photoemissive properties of K-Te films produced under ultrahigh vacuum conditions are reported. K-Te photocathodes were fabricated by vapor deposition of Te and K onto a Mo substrate into the preparation chamber of the Free Electron Laser of the University of Twente. The highest quantum efficiency obtained at 259 nm was 11.1%, measured just after evaporation; this value decreased in a few minutes to a stable quantum efficiency of 8.3%. The reported results show that K-Te can be considered a promising material for the use asa photocathode in photoinjectors. (C) 1996 American Institute of Physics.

Photoemission from K-Te photocathodes

BISERO, Diego;
1996

Abstract

In this letter the photoemissive properties of K-Te films produced under ultrahigh vacuum conditions are reported. K-Te photocathodes were fabricated by vapor deposition of Te and K onto a Mo substrate into the preparation chamber of the Free Electron Laser of the University of Twente. The highest quantum efficiency obtained at 259 nm was 11.1%, measured just after evaporation; this value decreased in a few minutes to a stable quantum efficiency of 8.3%. The reported results show that K-Te can be considered a promising material for the use asa photocathode in photoinjectors. (C) 1996 American Institute of Physics.
1996
Bisero, Diego; B. M., Vanoerle; G. J., Ernst; J. W. J., Verschuur; W. J., Witteman
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1677679
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