The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV He-4(+) Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220-350 degrees C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50+/-0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation. (C) 1998 American Institute of Physics.
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
BISERO, Diego;
1998
Abstract
The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV He-4(+) Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220-350 degrees C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50+/-0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation. (C) 1998 American Institute of Physics.I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
