Scanning tunneling microscopy (STM) in air has been used to investigate the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD). It has been found that, even when working in air, the technique gives detailed information about microroughness and mean grain size. Distinguishing between two different length scales, values for inter- and intra-grain roughness as a function of phosphorus doses are reported.
Scanning-tunneling-microscopy Investigation of Phosphorus-doped Polycrystalline Silicon Films
BISERO, Diego
1993
Abstract
Scanning tunneling microscopy (STM) in air has been used to investigate the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD). It has been found that, even when working in air, the technique gives detailed information about microroughness and mean grain size. Distinguishing between two different length scales, values for inter- and intra-grain roughness as a function of phosphorus doses are reported.File in questo prodotto:
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