This two part work aims to review the properties of the Si:H system especially at high concentration, and to clarify a few oversaturated Si:H system which have not been covered in the literature, especially in relation to the influence of substrate doping and pre-existing or process-induced defects. The first part reviews the current knowledge of the Si:H system, while the second part describes and comments on new results obtained in an extended characterization of Si:H systems prepared with different procedures.

Hydrogen Precipitation In Highly Oversaturated Single-crystalline Silicon

BISERO, Diego;
1995

Abstract

This two part work aims to review the properties of the Si:H system especially at high concentration, and to clarify a few oversaturated Si:H system which have not been covered in the literature, especially in relation to the influence of substrate doping and pre-existing or process-induced defects. The first part reviews the current knowledge of the Si:H system, while the second part describes and comments on new results obtained in an extended characterization of Si:H systems prepared with different procedures.
1995
G. F., Cerofolini; R., Balboni; Bisero, Diego; F., Corni; S., Frabboni; G., Ottaviani; R., Tonini; R. S., Brusa; A., Zecca; M., Ceschini; G., Giebel; ...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1677317
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