This two part work aims to review the properties of the Si:H system especially at high concentration, and to clarify a few oversaturated Si:H system which have not been covered in the literature, especially in relation to the influence of substrate doping and pre-existing or process-induced defects. The first part reviews the current knowledge of the Si:H system, while the second part describes and comments on new results obtained in an extended characterization of Si:H systems prepared with different procedures.
Hydrogen Precipitation In Highly Oversaturated Single-crystalline Silicon
BISERO, Diego;
1995
Abstract
This two part work aims to review the properties of the Si:H system especially at high concentration, and to clarify a few oversaturated Si:H system which have not been covered in the literature, especially in relation to the influence of substrate doping and pre-existing or process-induced defects. The first part reviews the current knowledge of the Si:H system, while the second part describes and comments on new results obtained in an extended characterization of Si:H systems prepared with different procedures.File in questo prodotto:
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