The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results. © 2012 Elsevier B.V. All rights reserved.

Radiation emission phenomena in bent silicon crystals: Theoretical and experimental studies with 120 GeV/c positrons

BAGLI, Enrico;BARICORDI, Stefano;DALPIAZ, Pietro;GUIDI, Vincenzo;MAZZOLARI, Andrea;VINCENZI, Donato;
2012

Abstract

The radiation emission phenomena in bent silicon crystals have been thoroughly investigated at the CERN SPS-H4 beamline. The incoming and outgoing trajectories of charged particles impinging on a silicon strip crystal have been reconstructed by high precision silicon microstrip detectors. A spectrometer method has been exploited to measure the radiation emission spectra both in volume reflection and in channeling. The theoretical method used to evaluate the photon spectra is presented and compared with the experimental results. © 2012 Elsevier B.V. All rights reserved.
2012
D., Lietti; Bagli, Enrico; Baricordi, Stefano; A., Berra; D., Bolognini; P. N., Chirkov; Dalpiaz, Pietro; G., Della Mea; D., De Salvador; S., Hasan; G...espandi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1670278
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