In this work we present a review of Si/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), a technique which may be used for the manufacturing of electronic devices such as modulation doped FETs (MODFETs), strained-layer SiGe MOSFETs, photodiodes and solar cells.

SiGe heteroepitaxy by low-energy plasma processing

VINCENZI, Donato
2009

Abstract

In this work we present a review of Si/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), a technique which may be used for the manufacturing of electronic devices such as modulation doped FETs (MODFETs), strained-layer SiGe MOSFETs, photodiodes and solar cells.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1616070
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