We propose a method to fabricate crystals through silicon micromachining techniques, i.e., anisotropic silicon etching. Characterization of the crystals highlight that the crystals are free of lattice damage induced by the preparation. Crystals were positively tested at the external line H8 of the SPS with 400 GeV protons for investigation on planar and axial channeling as well as on single and multiple volume reflection experiments by the H8-RD22 collaboration.

Fabrication of Crystals for Channeling of Particles in Accellerators

MAZZOLARI, Andrea;BAGLI, Enrico;BARICORDI, Stefano;CARASSITI, Vittore;DALPIAZ, Pietro;GUIDI, Vincenzo;MARTINELLI, Giuliano;VINCENZI, Donato;
2009

Abstract

We propose a method to fabricate crystals through silicon micromachining techniques, i.e., anisotropic silicon etching. Characterization of the crystals highlight that the crystals are free of lattice damage induced by the preparation. Crystals were positively tested at the external line H8 of the SPS with 400 GeV protons for investigation on planar and axial channeling as well as on single and multiple volume reflection experiments by the H8-RD22 collaboration.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11392/1381595
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