We propose a method to fabricate crystals through silicon micromachining techniques, i.e., anisotropic silicon etching. Characterization of the crystals highlight that the crystals are free of lattice damage induced by the preparation. Crystals were positively tested at the external line H8 of the SPS with 400 GeV protons for investigation on planar and axial channeling as well as on single and multiple volume reflection experiments by the H8-RD22 collaboration.
Fabrication of Crystals for Channeling of Particles in Accellerators
MAZZOLARI, Andrea;BAGLI, Enrico;BARICORDI, Stefano;CARASSITI, Vittore;DALPIAZ, Pietro;GUIDI, Vincenzo;MARTINELLI, Giuliano;VINCENZI, Donato;
2009
Abstract
We propose a method to fabricate crystals through silicon micromachining techniques, i.e., anisotropic silicon etching. Characterization of the crystals highlight that the crystals are free of lattice damage induced by the preparation. Crystals were positively tested at the external line H8 of the SPS with 400 GeV protons for investigation on planar and axial channeling as well as on single and multiple volume reflection experiments by the H8-RD22 collaboration.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in SFERA sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.